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We study the behavior of shot noise in resonant tunneling junctions far from equilibrium. Quantum-coherent elastic charge transport can be characterized by a transmission function, that is the probability for an incoming electron at a given energy to tunnel through a potential barrier. In systems such as quantum point contacts, electronic shot noise is oftentimes calculated based on a constant (energy independent) transmission probability, a good approximation at low temperatures and under a small bias voltage. Here, we generalize these investigations to far from equilibrium settings by evaluating the contributions of electronic resonances to the electronic current noise. Our study extends canonical expressions for the voltage-activated shot noise and the recently discovered delta-T noise to the far from equilibrium regime, when a high bias voltage or a temperature difference is applied. In particular, when the Fermi energy is located on the shoulder of a broad resonance, we arrive at a formula for the shot noise revealing anomalous-nonlinear behavior at high bias voltage.
Fluctuations pose fundamental limitations in making sensitive measurements, yet at the same time, noise unravels properties that are inaccessible at the level of the averaged signal. In electronic devices, shot noise arises from the discrete nature o
We have found experimentally that the shot noise in InAlAs-InGaAs-InAlAs Triple-Barrier Resonant-Tunneling Diodes (TBRTD) is reduced over the 2eI Poissonian value whenever their differential conductance is positive, and is enhanced over 2eI when the
We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunneling junctions with a high tunneling magnetoresistance ratio (over 200% at 3 K). Although the Fano factor in the anti-parallel configuration is close to unity, it is observed to be
Current noise is measured with a SQUID in low impedance and transparent Nb-Al-Nb j unctions of length comparable to the phase breaking length and much longer than the thermal length. The shot noise amplitude is compared with theoretical predictions o
Macroscopic resonant tunneling between the two lowest lying states of a bistable RF-SQUID is used to characterize noise in a flux qubit. Measurements of the incoherent decay rate as a function of flux bias revealed a Gaussian shaped profile that is n