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Recent advances in nanofabrication technology now enable unprecedented control over 2D heterostructures, in which single- or few-atom thick materials with synergetic opto-electronic properties can be combined to develop next-generation nanophotonic devices. Precise control of light can be achieved at the interface between 2D metal and dielectric layers, where surface plasmon polaritons strongly confine electromagnetic energy. Here we reveal quantum and finite-size effects in hybrid systems consisting of graphene and few-atomic-layer noble metals, based on a quantum description that captures the electronic band structure of these materials. These phenomena are found to play an important role in the metal screening of the plasmonic fields, determining the extent to which they propagate in the graphene layer. In particular, we find that a monoatomic metal layer is capable of pushing graphene plasmons toward the intraband transition region, rendering them acoustic, while the addition of more metal layers only produces minor changes in the dispersion but strongly affects the lifetime. We further find that a quantum approach is required to correctly account for the sizable Landau damping associated with single-particle excitations in the metal. We anticipate that these results will aid in the design of future platforms for extreme light-matter interaction on the nanoscale.
We determine the zero temeperature phase diagram of excitons in the symmetric transition-metal dichalcogenide tri-layer heterosctructure WSe2/MoSe2/WSe2. First principle calculations reveal two distinct types of interlayer excitonic states, a lower e
The ability to modulate light at high speeds is of paramount importance for telecommunications, information processing, and medical imaging technologies. This has stimulated intense efforts to master optoelectronic switching at visible and near-infra
Long-range and fast transport of coherent excitons is important for development of high-speed excitonic circuits and quantum computing applications. However, most of these coherent excitons have only been observed in some low-dimensional semiconducto
Van der Waals heterostructures have recently emerged as a new class of materials, where quantum coupling between stacked atomically thin two-dimensional (2D) layers, including graphene, hexagonal-boron nitride, and transition metal dichalcogenides (M
Excitons in semiconductors, bound pairs of excited electrons and holes, can form the basis for new classes of quantum optoelectronic devices. A van der Waals heterostructure built from atomically thin semiconducting transition metal dichalcogenides (