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تسجيل مستخدم جديدEngineering Topological quantum dot through planar magnetization in bismuthene
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The discovery of quantum spin Hall materials with huge bulk gaps in experiment, such as bismuthene, provides a versatile platform for topological devices. We propose a topological quantum dot (QD) device in bismuthene ribbon in which two planar magnetization areas separate the sample into a QD and two leads. At zero temperature, peaks of differential conductance emerge, demonstrating the discrete energy levels from the confined topological edge states. The key parameters of the QD, the tunneling coupling strength with the leads and the discrete energy levels, can be controlled by the planar magnetization and the sample size. Specially, different from the conventional QD, we find that the angle between two planar magnetization orientations provides an effective way to manipulate the discrete energy levels. Combining the numerical calculation and the theoretical analysis, we identify that such manipulation originates from the unique quantum confinement effect of the topological edge states. Based on such mechanism, we find the spin transport properties of QDs can also be controlled.
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Contents: (1) Model of a lateral quantum dot system (2) Thermally-activated conduction: onset of the Coulomb blockade oscillations and Coulomb blockade peaks at low temperature (3) Activationless transport through a blockaded quantum dot: inela
stic and elastic co-tunneling (4) Kondo regime in transport through a quantum dot: effective low-energy Hamiltonian; linear response; weak coupling regime; strong coupling regime; beyond linear response; splitting of the Kondo peak in a magnetic field; Kondo effect in quantum dots with large spin.
Quantum spin transport is studied in an interacting quantum dot. It is found that a conductance plateau emerges in the non-linear charge conductance by a spin bias in the Kondo regime. The conductance plateau, as a complementary to the Kondo peak, or
iginates from the strong electron correlation and exchange processes in the quantum dot, and can be regarded as one of the characteristics in quantum spin transport.
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