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We investigate the charging dynamics in epitaxially grown InAs quantum dots under resonant excitation with and without additional low-power above-band excitation. Time-resolved resonance fluorescence from a charged exciton (trion) transition is recorded as the above-band excitation is modulated on and off. The fluorescence intensity varies as the QD changes from charged to neutral and back due to the influence of the above-band excitation. We fit the transients of the time-resolved resonance fluorescence with models that represent the charging and neutralization processes. The time dependence of the transients indicate that Auger recombination of resonantly excited trions is largely responsible for neutralization of the charged state when the above-band excitation is off. The addition of above-band excitation revives the resonance fluorescence signal from the trion transition. We conclude that the above-band laser excites charges that relax into the bound state of the quantum dot via two different charge transport processes. The captured charges return the QD to its initial charge state and allow resonant excitation of the trion transition. The time dependence of one charge transport process is consistent with ballistic transport of charge carriers excited non-local to the QD via above-band excitation. We attribute the second charge transport process to carrier migration through a stochastic collection of weakly-binding sites, resulting in sub-diffusion-like dynamics.
We present a comprehensive study of the optical transitions and selection rules of variably charged single self-assembled InAs/GaAs quantum dots. We apply high resolution polarization sensitive photoluminescence excitation spectroscopy to the same qu
The optical spectroscopy of a single InAs quantum dot doped with a single Mn atom is studied using a model Hamiltonian that includes the exchange interactions between the spins of the quantum dot electron-hole pair, the Mn atom and the acceptor hole.
The coherent spin dynamics of resident carriers, electrons and holes, in semiconductor quantum structures is studied by periodical optical excitation using short laser pulses and in an external magnetic field. The generation and dephasing of spin pol
Graphene p-n junctions provide an ideal platform for investigating novel behavior at the boundary between electronics and optics that arise from massless Dirac fermions, such as whispering gallery modes and Veselago lensing. Bilayer graphene also hos
We demonstrate the real-time detection of single photogenerated electrons in two different lateral double quantum dots made in AlGaAs/GaAs/AlGaAs quantum wells having a thin or a thick AlGaAs barrier layer. The observed incident laser power and photo