اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدHigh-Temperature Photocurrent Mechanism of b{eta}-Ga2O3 Based MSM Solar-Blind Photodetectors
80
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
High-temperature operation of metal-semiconductor-metal (MSM) UV photodetectors fabricated on pulsed laser deposited b{eta}-Ga2O3 thin films has been investigated. These photodetectors were operated up to 250 {deg}C temperature under 255 nm illumination. The photo current to dark current (PDCR) ratio of about 7100 was observed at room temperature (RT) while it had a value 2.3 at 250 {deg}C at 10 V applied bias. A decline in photocurrent was observed from RT to 150 {deg}C and then it increased with temperature up to 250 {deg}C. The suppression of the blue band was also observed from 150 {deg}C temperature which indicated that self-trapped holes in Ga2O3 became unstable. Temperature-dependent rise and decay times of carriers were analyzed to understand the photocurrent mechanism and persistence photocurrent at high temperatures. Coupled electron-phonon interaction with holes was found to influence the photoresponse in the devices. The obtained results are encouraging and significant for high-temperature applications of b{eta}-Ga2O3 MSM deep UV photodetectors.
قيم البحث
اقرأ أيضاً
We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown b{eta}-(AlxGa1-x)2O3/b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped b{eta}-(AlxGa1-
x)2O3 barrier. Electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. Hall sheet charge density of 1.06 x 1013 cm-2 and mobility of 111 cm2/Vs is measured at room temperature. Fabricated transistor showed peak current of 22 mA/mm and on-off ratio of 8 x 106. Sheet resistance of 5.3 k{Omega}/Square is measured at room temperature, which includes contribution from a parallel channel in b{eta}-(AlxGa1-x)2O3.
Several pn junctions were constructed from mechanically exfoliated ultrawide bandgap (UWBG) beta-phase gallium oxide (b{eta}-Ga2O3) and p-type gallium nitride (GaN). The mechanical exfoliation process, which is described in detail, is similar to that
of graphene and other 2D materials. Atomic force microscopy (AFM) scans of the exfoliated b{eta}-Ga2O3 flakes show very smooth surfaces with average roughness of 0.647 nm and transmission electron microscopy (TEM) scans reveal flat, clean interfaces between the b{eta}-Ga2O3 flakes and p-GaN. The device showed a rectification ratio around 541.3 (V+5/V-5). Diode performance improved over the temperature range of 25{deg}C and 200{deg}C, leading to an unintentional donor activation energy of 135 meV. As the thickness of exfoliated b{eta}-Ga2O3 increases, ideality factors decrease as do the diode turn on voltages, tending toward an ideal threshold voltage of 3.2 V as determined by simulation. This investigation can help increase study of novel devices between mechanically exfoliated b{eta}-Ga2O3 and other materials.
We report on low-temperature MOVPE growth of silicon delta-doped b{eta}-Ga2O3 films with low FWHM. The as-grown films are characterized using Secondary-ion mass spectroscopy, Capacitance-Voltage and Hall techniques. SIMS measurements show that surfac
e segregation is the chief cause of large FWHM in MOVPE-grown films. The surface segregation coefficient (R) is observed to reduce with reduction in the growth temperature. Films grown at 600 {deg}C show an electron concentration of 9.7 x 1012 cm-2 and a FWHM of 3.2 nm. High resolution scanning/transmission electron microscopy of the epitaxial film did not reveal any significant observable degradation in crystal quality of the delta sheet and surrounding regions. Hall measurements of delta-doped film on Fe-doped substrate showed a sheet charge density of 6.1 x 1012 cm-2 and carrier mobility of 83 cm2/V. s. Realization of sharp delta doping profiles in MOVPE-grown b{eta}-Ga2O3 is promising for high performance device applications.
Due to the excellent electrical transport properties and optoelectronic performance, thin indium selenide (InSe) has recently attracted attention in the field of 2D semiconducting materials. However, the mechanism behind the photocurrent generation i
n thin InSe photodetectors remains elusive. Here, we present a set of experiments aimed at explaining the strong scattering in the photoresponsivity values reported in the literature for thin InSe photodetectors. By performing optoelectronic measurements on thin InSe-based photodetectors operated under different environmental conditions we find that the photoresponsivity, the response time and the photocurrent power dependency are strongly correlated in this material. This observation indicates that the photogating effect plays an imporant role for thin InSe flakes, and it is the dominant mechanism in the ultra-high photoresponsivity of pristine InSe devices. In addition, when exposing the pristine InSe photodetectors to the ambient environment we observe a fast and irreversible change in the photoresponse, with a decrease in the photoresponsivity accompanied by an increase of the operating speed. We attribute this photodetector performance change (upon atmospheric exposure) to the decrease in the density of the traps present in InSe, due to the passivation of selenium vacancies by atmospheric oxygen species. This passivation is accompanied by a downward shift of the InSe Fermi level and by a decrease of the Fermi level pinning, which leads to an increase of the Schottky barrier between Au and InSe. Our study reveals the important role of traps induced by defects in tailoring the properties of devices based on 2D materials and offers a controllable route to design and functionalize thin InSe photodetectors to realize devices with either ultrahigh photoresposivity or fast operation speed.
The ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates make b{eta}-Ga2O3 promising for applications of next-generation power electronics while its thermal conductivity is at least one order of magnitude lower than
other wide/ultrawide bandgap semiconductors. To avoid the degradation of device performance and reliability induced by the localized Joule-heating, aggressive thermal management strategies are essential, especially for high-power high-frequency applications. This work reports a scalable thermal management strategy to heterogeneously integrate wafer-scale monocrystalline b{eta}-Ga2O3 thin films on high thermal conductivity SiC substrates by ion-cutting technique. The thermal boundary conductance (TBC) of the b{eta}-Ga2O3-SiC interfaces and thermal conductivity of the b{eta}-Ga2O3 thin films were measured by Time-domain Thermoreflectance (TDTR) to evaluate the effects of interlayer thickness and thermal annealing. Materials characterizations were performed to understand the mechanisms of thermal transport in these structures. The results show that the b{eta}-Ga2O3-SiC TBC values increase with decreasing interlayer thickness and the b{eta}-Ga2O3 thermal conductivity increases more than twice after annealing at 800 oC due to the removal of implantation-induced strain in the films. A Callaway model is built to understand the measured thermal conductivity. Small spot-to-spot variations of both TBC and Ga2O3 thermal conductivity confirm the uniformity and high-quality of the bonding and exfoliation. Our work paves the way for thermal management of power electronics and b{eta}-Ga2O3 related semiconductor devices.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
