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تسجيل مستخدم جديدMicroscopic imaging of elastic deformation in diamond via in-situ stress tensor sensors
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The precise measurement of mechanical stress at the nanoscale is of fundamental and technological importance. In principle, all six independent variables of the stress tensor, which describe the direction and magnitude of compression/tension and shear stress in a solid, can be exploited to tune or enhance the properties of materials and devices. However, existing techniques to probe the local stress are generally incapable of measuring the entire stress tensor. Here, we make use of an ensemble of atomic-sized in-situ strain sensors in diamond (nitrogen-vacancy defects) to achieve spatial mapping of the full stress tensor, with a sub-micrometer spatial resolution and a sensitivity of the order of 1 MPa (corresponding to a strain of less than $10^{-6}$). To illustrate the effectiveness and versatility of the technique, we apply it to a broad range of experimental situations, including mapping the elastic stress induced by localized implantation damage, nano-indents and scratches. In addition, we observe surprisingly large stress contributions from functional electronic devices fabricated on the diamond, and also demonstrate sensitivity to deformations of materials in contact with the diamond. Our technique could enable in-situ measurements of the mechanical response of diamond nanostructures under various stimuli, with potential applications in strain engineering for diamond-based quantum technologies and in nanomechanical sensing for on-chip mass spectroscopy.
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Stress and strain are important factors in determining the mechanical, electronic, and optical properties of materials, relating to each other by the materials elasticity or stiffness. Both are represented by second rank field tensors with, in genera
l, six independent components. Measurements of these quantities are usually achieved by measuring a property that depends on the translational symmetry and periodicity of the crystal lattice, such as optical phonon energies using Raman spectroscopy, the electronic band gap using cathodoluminescence, photoelasticity via the optical birefringence, or Electron Back Scattering Diffraction (EBSD). A reciprocal relationship therefore exists between the maximum sensitivity of the measurements and the spatial resolution. Furthermore, of these techniques, only EBSD and off-axis Raman spectroscopy allow measurement of all six components of the stress tensor, but neither is able to provide full 3D maps. Here we demonstrate a method for measuring the full stress tensor in diamond, using the spectral and optical polarization properties of the photoluminescence from individual nitrogen vacancy (NV) colour centres. We demonstrate a sensitivity of order 10 MPa, limited by local fluctuations in the stress in the sample, and corresponding to a strain of about 10^-5, comparable with the best sensitivity provided by other techniques. By using the colour centres as built-in local sensors, the technique overcomes the reciprocal relationship between spatial resolution and sensitivity and offers the potential for measuring strains as small as 10^-9 at spatial resolution of order 10 nm. Furthermore it provides a straightforward route to volumetric stress mapping. Aside from its value in understanding strain distributions in diamond, this new approach to stress and strain measurement could be adapted for use in micro or nanoscale sensors.
Strain engineering allows the physical properties of materials and devices to be widely tailored, as paradigmatically demonstrated by strained transistors and semiconductor lasers employed in consumer electronics. For this reason, its potential impac
t on our society has been compared to that of chemical alloying. Although significant progress has been made in the last years on strained nanomaterials, strain fields (which are of tensorial nature, with six independent components) are still mostly used in a scalar and/or static fashion. Here we present a new class of strain actuators which allow the three components of the in-plane stress tensor in a nanomembrane to be independently and reversibly controlled. The actuators are based on monolithic piezoelectric substrates, which are micro-machined via femtosecond-laser processing. Their functionality is demonstrated by programming arbitrary stress states in a semiconductor layer, whose light emission is used as a local and sensitive strain gauge. The results shown in this work open a new route to investigate and make use of strain effects in materials and devices.
Crystal surfaces are sensitive to the surrounding environment, where atoms left with broken bonds reconstruct to minimize surface energy. In many cases, the surface can exhibit chemical properties unique from the bulk. These differences are important
as they control reactions and mediate thin film growth. This is particularly true for complex oxides where certain terminating crystal planes are polar and have a net dipole moment. For polar terminations, reconstruction of atoms on the surface is the central mechanism to avoid the so called polar catastrophe. This adds to the complexity of the reconstruction where charge polarization and stoichiometry govern the final surface in addition to standard thermodynamic parameters such as temperature and partial pressure. Here we present direct, in-situ determination of polar SrTiO3 (110) surfaces at temperatures up to 900 C using cross-sectional aberration corrected scanning transmission electron microscopy (STEM). Under these conditions, we observe the coexistence of various surface structures that change as a function of temperature. As the specimen temperature is lowered, the reconstructed surface evolves due to thermal mismatch with the substrate. Periodic defects, similar to dislocations, are found in these surface structures and act to relieve stress due to mismatch. Combining STEM observations and electron spectroscopy with density functional theory, we find a combination of lattice misfit and charge compensation for stabilization. Beyond the characterization of these complex reconstructions, we have developed a general framework that opens a new pathway to simultaneously investigate the surface and near surface regions of single crystals as a function of environment.
Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precision measurement is vital in a variety of contexts from the optimisation
of field effect transistors to the engineering of qubit devices with enhanced stability and coherence. Existing methods are surface sensitive and are unable to probe band bending at depth from surface or bulk charges related to crystal defects. Here we propose an in-situ method for probing band bending in a semiconductor device by imaging an array of atomic-sized quantum sensing defects to report on the local electric field. We implement the concept using the nitrogen-vacancy centre in diamond, and map the electric field at different depths under various surface terminations. We then fabricate a two-terminal device based on the conductive two-dimensional hole gas formed at a hydrogen-terminated diamond surface, and observe an unexpected spatial modulation of the electric field attributed to a complex interplay between charge injection and photo-ionisation effects. Our method opens the way to three-dimensional mapping of band bending in diamond and other semiconductors hosting suitable quantum sensors, combined with simultaneous imaging of charge transport in complex operating devices.
The atomic theory of elasticity of amorphous solids, based on the nonaffine response formalism, is extended into the nonlinear stress-strain regime by coupling with the underlying irreversible many-body dynamics. The latter is implemented in compact
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