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Characterizing charge noise is of prime importance to the semiconductor spin qubit community. We analyze the echo amplitude data from a recent experiment [Yoneda et al., Nat. Nanotechnol. 13, 102 (2018)] and note that the data shows small but consistent deviations from a $1/f^alpha$ noise power spectrum at the higher frequencies in the measured range. We report the results of using a physical noise model based on two-level fluctuators to fit the data and find that it can mostly explain the deviations. While our results are suggestive rather than conclusive, they provide what may be an early indication of a high-frequency cutoff in the charge noise. The location of this cutoff, where the power spectral density of the noise gradually rolls off from $1/f$ to $1/f^2$, crucial knowledge for designing precise qubit control pulses, is given by our fit of the data to be around 200 kHz.
Electron spins in silicon have long coherence times and are a promising qubit platform. However, electric field noise in semiconductors poses a challenge for most single- and multi-qubit operations in quantum-dot spin qubits. Here, we investigate the
The valley degree of freedom presents challenges and opportunities for silicon spin qubits. An important consideration for singlet-triplet states is the presence of two distinct triplets, comprised of valley vs. orbital excitations. Here we show that
Electron spins in silicon quantum dots are promising qubits due to their long coherence times, scalable fabrication, and potential for all-electrical control. However, charge noise in the host semiconductor presents a major obstacle to achieving high
We study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to be sensit
We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability diagrams ar