اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدNon-Equilibrium Phonon Transport Across Nanoscale Interfaces
376
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Despite the ubiquity of applications of heat transport across nanoscale interfaces, including integrated circuits, thermoelectrics, and nanotheranostics, an accurate description of phonon transport in these systems remains elusive. Here we present a theoretical and computational framework to describe phonon transport with position, momentum and scattering event resolution. We apply this framework to a single material spherical nanoparticle for which the multidimensional resolution offers insight into the physical origin of phonon thermalization, and length-scale dependent anisotropy of steady-state phonon distributions. We extend the formalism to handle interfaces explicitly and investigate the specific case of semi-coherent materials interfaces by computing the coupling between phonons and interfacial strain resulting from aperiodic array of misfit dislocations. Our framework quantitatively describes the thermal interface resistance within the technologically relevant Si-Ge heterostructures. In future, this formalism could provide new insight into coherent and driven phonon effects in nanoscale materials increasingly accessible via ultrafast, THz and near-field spectroscopies.
قيم البحث
اقرأ أيضاً
In a number of current experiments in the field of spin-caloritronics a temperature gradient across a nanostructured interface is applied and spin-dependent transport phenomena are observed. However, a lack in the interpretation and knowledge let it
unclear how the temperature drop across a magnetic nanostructured interface looks like where both phonons and electrons may contribute to thermal transport. We answer this question for the case of a magnetic tunnel junction (MTJ) where the tunneling magneto Seebeck effect occurs. Nevertheless, our results can be extended to other nanostructured interfaces as well. Using an textit{ab initio} method we explicitly calculate phonon and electron thermal conductance across the Fe/MgO/Fe-MTJs by using Greens function method. Further, by estimating the electron-phonon interaction in the Fe leads we are able to calculate the electron and phonon temperature profile across the Fe/MgO/Fe-MTJ. Our results show that there is an electron-phonon temperature imbalance at the Fe-MgO interfaces. In consequence, a revision of the interpretation of current experimental measurements might be necessary.
We report nanoscale bandgap engineering via a local strain across the inhomogeneous ferroelectric interface, which is controlled by the visible-light-excited probe voltage. Switchable photovolatic effects and the spectral response of the photocurrent
were explore to illustrate the reversible bandgap variation (~0.3eV). This local-strain-engineered bandgap has been further revealed by in situ probe-voltage-assisted valence electron energy-loss spectroscopy (EELS). Phase-field simulations and first-principle calculations were also employed for illustration of the large local strain and the bandgap variation in ferroelectric perovskite oxides. This reversible bandgap tuning in complex oxides demonstrates a framework for the understanding of the opticallyrelated behaviors (photovoltaic, photoemission, and photocatalyst effects) affected by order parameters such as charge, orbital, and lattice parameters.
A temperature-dependent approach involving Green-Kubo equilibrium atomic and spin dynamics (GKEASD) is reported to assess phonon and magnon thermal transport processes accounting for phonon-magnon interactions. Using body-center cubic (BCC) iron as a
case study, GKEASD successfully reproduces its characteristic temperature-dependent spiral and lattice thermal conductivities. The non-electronic thermal conductivity, i.e., the sum of phonon and magnon thermal conductivities, calculated using GKEASD for BCC Fe agrees well with experimental measurements. Spectral energy analysis reveals that high-frequency phonon-magnon scattering rates are one order of magnitude larger than those at low frequencies due to energy scattering conservation rules and high densities of states. Higher temperatures further accentuate this phenomenon. This new framework fills existing gaps in simulating thermal transport across the ferro- to para-magnetic transition. Future application of this methodology to phonon- and magnon-dominant insulators and semiconductors will enhance understanding of emerging thermoelectric, spin caloritronic and superconducting materials.
Experimental observation of highly reduced thermal conductivity in surface-roughness dominated silicon nanowires have generated renewed interest in low-dimensional thermoelectric devices. Using a previous work where the scattering of phonons from a r
ough surface is mapped to scattering from randomly situated localized phonons in the bulk of a smooth nanowire, we consider the thermal current across a nanowire for various strengths of surface disorder. We use non-equilibrium Greens function techniques that allow us to evaluate the thermal current beyond the linear response regime, for arbitrary cold and hot temperatures of the two semi-infinite connecting leads. We show how the surface-roughness affects the frequency dependence of the thermal current, eventually leading to a temperature dependent reduction of the net current at high temperatures. We use a universal disorder parameter to describe the surface-roughness as has been proposed, and show that the dependence of the net current on this parameter provides a natural explanation for the experimentally observed differences between smooth vs rough surfaces. We argue that a systematic study of the thermal current for different values of the temperature difference between the two sides of a surface-roughness dominated nanowire for various strengths of disorder would help in our understanding of how best to optimize the thermoelectric efficiency.
Step junctions are often present in layered materials, i.e. where single-layer regions meet multi-layer regions, yet their effect on thermal transport is not understood to date. Here, we measure heat flow across graphene junctions (GJs) from monolaye
r to bilayer graphene, as well as bilayer to four-layer graphene for the first time, in both heat flow directions. The thermal conductance of the monolayer-bilayer GJ device ranges from ~0.5 to 9.1x10^8 Wm-2K-1 between 50 K to 300 K. Atomistic simulations of such GJ device reveal that graphene layers are relatively decoupled, and the low thermal conductance of the device is determined by the resistance between the two dis-tinct graphene layers. In these conditions the junction plays a negligible effect. To prove that the decoupling between layers controls thermal transport in the junction, the heat flow in both directions was measured, showing no evidence of thermal asymmetry or rectification (within experimental error bars). For large-area graphene applications, this signifies that small bilayer (or multilayer) islands have little or no contribution to overall thermal transport.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
