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تسجيل مستخدم جديدMechanism of Neel order switching in antiferromagnetic thin films revealed by magnetotransport and direct imaging
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We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.
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We report the direct observation of switching of the Neel vector of antiferromagnetic (AFM) domains in response to electrical pulses in micron-scale Pt/$alpha$-Fe$_2$O$_3$ Hall bars using photoemission electron microscopy. Current pulses lead to reve
rsible and repeatable switching, with the current direction determining the final state, consistent with Hall effect experiments that probe only the spatially averaged response. Current pulses also produce irreversible changes in domain structure, in and even outside the current path. In both cases only a fraction of the domains switch in response to pulses. Further, analysis of images taken with different x-ray polarizations shows that the AFM Neel order has an out-of-plane component in equilibrium that is important to consider in analyzing the switching data. These results show that -in addition to effects associated with spin-orbit torques from the Pt layer, which can produce reversible switching-changes in AFM order can be induced by purely thermal effects.
We unravel the origin of current-induced magnetic switching of insulating antiferromagnet/heavy metal systems. We utilize concurrent transport and magneto-optical measurements to image the switching of antiferromagnetic domains in specially engineere
d devices of NiO/Pt bilayers. Different electrical pulsing and device geometries reveal different final states of the switching with respect to the current direction. We can explain these through simulations of the temperature induced strain and we identify the thermomagnetoelastic switching mechanism combined with thermal excitations as the origin, in which the final state is defined by the strain distributions and heat is required to switch the antiferromagnetic domains. We show that such a potentially very versatile non-contact mechanism can explain the previously reported contradicting observations of the switching final state, which were attributed to spin-orbit torque mechanisms.
Understanding the electrical manipulation of antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequency. Focusing on collinear insulating antiferromagnetic NiO/Pt thin films as a materials p
latform, we identify the crystallographic orientation of the domains that can be switched by currents and quantify the Neel vector direction changes. We demonstrate electrical switching between different T-domains by current pulses, finding that the Neel vector orientation in these domains is along $[pm5 pm5 19]$, different compared to the bulk $<11bar{2}>$ directions. The final state of the Neel vector $textbf{n}$ switching after current pulses $textbf{j}$ along the $[1 pm1 0]$ directions is $textbf{n}parallel textbf{j}$. By comparing the observed Neel vector orientation and the strain in the thin films, assuming that this variation arises solely from magnetoelastic effects, we quantify the order of magnitude of the magnetoelastic coupling coefficient as $b_{0}+2b_{1}=3*10^7 J m^{-3}$ . This information is key for the understanding of current-induced switching in antiferromagnets and for the design and use of such devices as active elements in spintronic devices.
Recent demonstrations of electrical detection and manipulation of antiferromagnets (AFMs) have opened new opportunities towards robust and ultrafast spintronics devices. However, it is difficult to establish the connection between the spin-transport
behavior and the microscopic AFM domain states due to the lack of the real-time AFM domain imaging technique under the electric field. Here we report a significant Voigt rotation up to 60 mdeg in thin NiO(001) films at room temperature. Such large Voigt rotation allows us to directly observe AFM domains in thin-film NiO by utilizing a wide-field optical microscope. Further complementary XMLD-PEEM measurement confirms that the Voigt contrast originates from the NiO AFM order. We examine the domain pattern evolution at a wide range of temperature and with the application of external magnetic field. Comparing to large-scale-facility techniques such as the X-ray photoemission electron microscopy, the use with a wide-field, tabletop optical imaging method enables straightforward access to domain configurations of single-layer AFMs.
One of the most important challenges in antiferromagnetic spintronics is the read-out of the Neel vector state. High current densities up to 10$^8$ Acm$^{-2}$ used in the electrical switching experiments cause notorious difficulty in distinguishing b
etween magnetic and thermal origins of the electrical signals. To overcome this problem, we present a temperature dependence study of the transverse resistance changes in the switching experiment with CoO|Pt devices. We demonstrate the possibility to extract a pattern of spin Hall magnetoresistance for current pulses density of $5 times 10^7$ Acm$^{-2}$ that is present only below the Neel temperature and does not follow a trend expected for thermal effects. This is the compelling evidence for the magnetic origin of the signal, which is observed using purely electrical techniques. We confirm these findings by complementary experiments in an external magnetic field. Such an approach can allow determining the optimal conditions for switching antiferromagnets and be very valuable when no imaging techniques can be applied to verify the origin of the electrical signal.
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