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In the recent work of Ref.cite{Vlaic2017-bs}, it has been shown that Pb nanocrystals grown on the electron accumulation layer at the (110) surface of InAs are in the regime of Coulomb blockade. This enabled the first scanning tunneling spectroscopy study of the superconducting parity effect across the Anderson limit. The nature of the tunnel barrier between the nanocrystals and the substrate has been attributed to a quantum constriction of the electronic wave-function at the interface due to the large Fermi wavelength of the electron accumulation layer in InAs. In this manuscript, we detail and review the arguments leading to this conclusion. Furthermore, we show that, thanks to this highly clean tunnel barrier, this system is remarkably suited for the study of discrete electronic levels induced by quantum confinement effects in the Pb nanocrystals. We identified three distinct regimes of quantum confinement. For the largest nanocrystals, quantum confinement effects appear through the formation of quantum well states regularly organized in energy and in space. For the smallest nanocrystals, only atomic-like electronic levels separated by a large energy scale are observed. Finally, in the intermediate size regime, discrete electronic levels associated to electronic wave-functions with a random spatial structure are observed, as expected from Random Matrix Theory.
We present a study of Andreev Quantum Dots (QDots) fabricated with small-diameter (30 nm) Si-doped InAs nanowires where the Fermi level can be tuned across a mobility edge separating localized states from delocalized states. The transition to the ins
Motivated by the recent proposals for unconventional emergent physics in twisted bilayers of nodal superconductors, we study the peculiarities of the Josephson effect at the twisted interface between $d$-wave superconductors. We demonstrate that for
Twisted bilayers of high-$T_c$ cuprate superconductors have been argued to form topological phases with spontaneously broken time reversal symmetry ${cal T}$ for certain twist angles. With the goal of helping to identify unambiguous signatures of the
Recently, a honeycomb borophene was reported to grow successfully on Al(111) surface. Since the metallic $sigma$-bonding bands of honeycomb boron sheet play a crucial role in the 39 K superconductivity of MgB$_2$, it is physically interesting to exam
We combine electron beam lithography and masked anodization of epitaxial aluminium to define tunnel junctions via selective oxidation, alleviating the need for wet-etch processing or direct deposition of dielectric materials. Applying this technique