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Growing interest in devices based on layered van der Waals (vdW) materials is motivating the development of new nanofabrication methods. Hexagonal boron nitride (hBN) is one of the most promising materials for studies of quantum photonics and polaritonics. Here, we report in detail on a promising nanofabrication processes used to fabricate several hBN photonic devices using a hybrid electron beam induced etching (EBIE) and reactive ion etching (RIE) technique. We highlight the shortcomings and benefits of RIE and EBIE and demonstrate the utility of the hybrid approach for the fabrication of suspended and supported device structures with nanoscale features and highly vertical sidewalls. Functionality of the fabricated devices is proven by measurements of high quality cavity optical modes (Q~1500). Our nanofabrication approach constitutes an advance towards an integrated, monolithic quantum photonics platform based on hBN and other layered vdW materials.
Development of scalable quantum photonic technologies requires on-chip integration of components such as photonic crystal cavities and waveguides with nonclassical light sources. Recently, hexagonal boron nitride (hBN) has emerged as a promising plat
Luminescent defect-centers in hexagonal boron nitride (hBN) have emerged as a promising 2D-source of single photon emitters (SPEs) due to their high brightness and robust operation at room temperature. The ability to create such emitters with well-de
Nanoscale optical thermometry is a promising non-contact route for measuring local temperature with both high sensitivity and spatial resolution. In this work, we present a deterministic optical thermometry technique based on quantum emitters in nano
Single photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered significant attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations,
We demonstrate the fabrication of large-scale arrays of single photon emitters (SPEs) in hexagonal boron nitride (hBN). Bottom-up growth of hBN onto nanoscale arrays of dielectric pillars yields corresponding arrays of hBN emitters at the pillar site