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تسجيل مستخدم جديدFerromagnetic Josephson junctions for cryogenic memory
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Josephson junctions containing ferromagnetic materials have attracted intense interest both because of their unusual physical properties and because they have potential application for cryogenic memory. There are two ways to store information in such a junction: either in the amplitude of the critical current or in the ground-state phase difference across the junction; the latter is the topic of this paper. We have recently demonstrated two different ways to achieve phase control in such junctions: the first uses junctions containing two magnetic layers in a pseudo spin valve configuration, while the second uses junctions containing three magnetic layers with non-collinear magnetizations. The demonstration devices, however, have not yet been optimized for use in a large-scale cryogenic memory array. In this paper we outline some of the issues that must be considered to perform such an optimization, and we provide a speculative phase-diagram for the nickel-permalloy spin-valve system showing which combinations of ferromagnetic layer thicknesses should produce useful devices.
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Josephson junctions containing ferromagnetic layers have generated interest for application in cryogenic memory. In a junction containing both a magnetically hard fixed layer and soft free layer with carefully chosen thicknesses, the ground-state pha
se difference of the junction can be controllably switched between 0 and {pi} by changing the relative orientation of the two ferromagnetic layers from antiparallel to parallel. This phase switching has been observed in junctions using Ni fixed layers and NiFe free layers. We present phase-sensitive measurements of such junctions in low-inductance symmetric SQUID loops which simplify analysis relative to our previous work. We confirm controllable 0 - {pi} switching in junctions with 2.0 nm Ni fixed layers and 1.25 nm NiFe free layers across multiple devices and using two SQUID designs, expanding the phase diagram of known thicknesses that permit phase control.
Josephson junctions containing two ferromagnetic layers are being considered for use in cryogenic memory. Our group recently demonstrated that the ground-state phase difference across such a junction with carefully chosen layer thicknesses could be c
ontrollably toggled between zero and $pi$ by switching the relative magnetization directions of the two layers between the antiparallel and parallel configurations. However, several technological issues must be addressed before those junctions can be used in a large-scale memory. Many of these issues can be more easily studied in single junctions, rather than in the Superconducting QUantum Interference Device (SQUID) used for the phase-sensitive measurements. In this work, we report a comprehensive study of spin-valve junctions containing a Ni layer with a fixed thickness of 2.0 nm, and a NiFe layer of thickness varying between 1.1 and 1.8 nm in steps of 0.1 nm. We extract the field shift of the Fraunhofer patterns and the critical currents of the junctions in the parallel and antiparallel magnetic states, as well as the switching fields of both magnetic layers. We also report a partial study of similar junctions containing a slightly thinner Ni layer of 1.6 nm and the same range of NiFe thicknesses. These results represent the first step toward mapping out a ``phase diagram for phase-controllable spin-valve Josephson junctions as a function of the two magnetic layer thicknesses.
We investigate Magnetic Josephson Junction (MJJ) - a superconducting device with ferromagnetic barrier for a scalable high-density cryogenic memory compatible with energy-efficient single flux quantum (SFQ) circuits. The superconductor-insulator-supe
rconductor-ferromagnet-superconductor (SISFS) MJJs are analyzed both experimentally and theoretically. We found that the properties of SISFS junctions fall into two distinct classes based on the thickness of S layer. We fabricate Nb-Al/AlOx-Nb-PdFe-Nb SISFS MJJs using a co-processing approach with a combination of HYPRES and ISSP fabrication processes. The resultant SISFS structure with thin superconducting S-layer is substantially affected by the ferromagnetic layer as a whole. We fabricate these type of junctions to reach the device compatibility with conventional SIS junctions used for superconducting SFQ electronics to ensure a seamless integration of MJJ-based circuits and SIS JJ-based ultra-fast digital SFQ circuits. We report experimental results for MJJs, demonstrating their applicability for superconducting memory and digital circuits. These MJJs exhibit IcRn product only ~30% lower than that of conventional SIS junctions co-produced in the same fabrication. Analytical calculations for these SISFS structures are in a good agreement with the experiment. We discuss application of MJJ devices for memory and programmable logic circuits.
In this work we give a characterization of the RF effect of memory switching on Nb-Al/AlOx-(Nb)-Pd$_{0.99}$Fe$_{0.01}$-Nb Josephson junctions as a function of magnetic field pulse amplitude and duration, alongside with an electrodynamical characteriz
ation of such junctions, in comparison with standard Nb-Al/AlOx-Nb tunnel junctions. The use of microwaves to tune the switching parameters of magnetic Josephson junctions is a step in the development of novel addressing schemes aimed at improving the performances of superconducting memories.
Due to the ever increasing power and cooling requirements of large-scale computing and data facilities, there is a worldwide search for low-power alternatives to CMOS. One approach under consideration is superconducting computing based on single-flux
-quantum logic. Unfortunately, there is not yet a low-power, high-density superconducting memory technology that is fully compatible with superconducting logic. We are working toward developing cryogenic memory based on Josephson junctions that contain two or more ferromagnetic (F) layers. Such junctions have been demonstrated to be programmable by changing the relative direction of the F layer magnetizations. There are at least two different types of such junctions -- those that carry the innate spin-singlet supercurrent associated with the conventional superconducting electrodes, and those that convert spin-singlet to spin-triplet supercurrent in the middle of the device. In this paper we compare the performance and requirements of the two kinds of junctions. Whereas the spin-singlet junctions need only two ferromagnetic layers to function, the spin-triplet junctions require at least three. In the devices demonstrated to date, the spin-singlet junctions have considerably larger critical current densities than the spin-triplet devices. On the other hand, the spin-triplet devices have less stringent constraints on the thicknesses of the F layers, which might be beneficial in large-scale manufacturing.
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