ترغب بنشر مسار تعليمي؟ اضغط هنا

Definition of a scoring parameter to identify low-dimensional materials components

74   0   0.0 ( 0 )
 نشر من قبل Peter Larsen
 تاريخ النشر 2018
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

The last decade has seen intense research in materials with reduced dimensionality. The low dimensionality leads to interesting electronic behavior due to electronic confinement and reduced screening. The investigations have to a large extent focused on 2D materials both in their bulk form, as individual layers a few atoms thick, and through stacking of 2D layers into heterostructures. The identification of low-dimensional compounds is therefore of key interest. Here, we perform a geometric analysis of material structures, demonstrating a strong clustering of materials depending on their dimensionalities. Based on the geometric analysis, we propose a simple scoring parameter to identify materials of a particular dimension or of mixed dimensionality. The method identifies spatially connected components of the materials and gives a measure of the degree of 1D-ness, 2D-ness, etc., for each component. The scoring parameter is applied to the Inorganic Crystal Structure Database and the Crystallography Open Database ranking the materials according to their degree of dimensionality. In the case of 2D materials the scoring parameter is seen to clearly separate 2D from non-2D materials and the parameter correlates well with the bonding strength in the layered materials. About 3000 materials are identified as one-dimensional, while more than 9000 are mixed-dimensionality materials containing a molecular (0D) component. The charge states of the components in selected highly ranked materials are investigated using density functional theory and Bader analysis showing that the spatially separated components have either zero charge, corresponding to weak interactions, or integer charge, indicating ionic bonding.

قيم البحث

اقرأ أيضاً

73 - Yubo Qi , Andrew M. Rappe 2020
In this study, we investigate the underlying mechanisms of the negative piezoelectricity in low--dimensional materials by carrying out first--principles calculations. Two--dimensional ferroelectric CuInP$_2$S$_6$ is analyzed in detail as a typical ex ample, but the theory can be applied to all other low--dimensional piezoelectrics. Similar to three--dimensional piezoelectrics with negative piezoelectric responses, the anomalous negative piezoelectricity in CuInP$_2$S$_6$ results from its negative clamped--ion term, which cannot be compensated by the positive internal strain part. Here, we propose a more general rule that having a negative clamped--ion term should be universal among piezoelectric materials, which is attributed to the lag of Wannier center effect. The internal--strain term, which is the change in polarization due to structural relaxation in response to strain, is mostly determined by the spatial structure and chemical bonding of the material. In a low--dimensional piezoelectric material as CuInP$_2$S$_6$, the internal--strain term is approximately zero. This is because the internal structure of the molecular layers, which are bonded by the weak van der Waals interaction, responds little to the strain. As a result, the magnitude of the dipole, which depends strongly on the dimension and structure of the molecular layer, also has a small response with respect to strain. An equation bridging the internal strain responses in low--dimensional and three--dimensional piezoelectrics is also derived to analytically express this point. This work aims to deepen our understanding about this anomalous piezoelectric effect, especially in low--dimensional materials, and provide strategies for discovering materials with novel electromechanical properties.
Recent advances in scanning transmission electron microscopy (STEM) instrumentation have made it possible to focus electron beams with sub-atomic precision and to identify the chemical structure of materials at the level of individual atoms. Here we discuss the dynamics that are observed in the structure of low-dimensional materials under electron irradiation, and the potential use of electron beams for single-atom manipulation. As a demonstration of the latter capability, we show how momentum transfer from the electrons of a 60-keV {AA}ngstrom-sized STEM probe can be used to move silicon atoms embedded in the graphene lattice with atomic precision.
The accelerated growth rate of repository entries in crystallographic databases makes it arduous to identify and classify their prototype structures. The open-source AFLOW-XtalFinder package was developed to solve this problem. It symbolically maps s tructures into standard designations following the AFLOW Prototype Encyclopedia and calculates the internal degrees of freedom consistent with the International Tables for Crystallography. To ensure uniqueness, structures are analyzed and compared via symmetry, local atomic geometries, and crystal mapping techniques, simultaneously grouping them by similarity. The software i. distinguishes distinct crystal prototypes and atom decorations, ii. determines equivalent spin configurations, iii. reveals compounds with similar properties, and iv. guides the discovery of unexplored materials. The operations are accessible through a Python module ready for workflows, and through command line syntax. All the 4+ million compounds in the AFLOW.org repositories are mapped to their ideal prototype, allowing users to search database entries via symbolic structure-type. Furthermore, 15,000 unique structures - sorted by prevalence - are extracted from the AFLOW-ICSD catalog to serve as future prototypes in the Encyclopedia.
It is well known that the ambient environment can dramatically renormalize the quasiparticle gap and exciton binding energies in low-dimensional materials, but the effect of the environment on the energy splitting of the spin-singlet and spin-triplet exciton states is less understood. A prominent effect is the renormalization of the exciton binding energy and optical strength (and hence the optical spectrum) through additional screening of the direct Coulomb term describing the attractive electron-hole interaction in the kernel of the Bethe-Salpeter equation (BSE). The repulsive exchange interaction responsible for the singlet-triplet slitting, on the other hand, is unscreened within formal many-body perturbation theory. However, Loren Benedict argued that in practical calculations restricted to a subspace of the full Hilbert space, the exchange interaction should be appropriately screened by states outside of the subspace, the so-called $S$ approximation cite{Benedict2002}. Here, we systematically explore the accuracy of the $S$ approximation for different confined systems, including a molecule and heterostructures of semiconducting and metallic layered materials. We show that the $S$ approximation is actually exact in the limit of small exciton binding energies (i.e., small direct term) and can be used to significantly accelerate convergence of the exciton energies with respect to the number of empty states, provided that a particular effective screening consistent with the conventional Tamm-Dancoff approximation is employed. We further find that the singlet-triplet splitting in the energy of the excitons is largely unaffected by the external dielectric environment for most quasi-two-dimensional materials.
The relation between unusual Mexican-hat band dispersion, ferromagnetism and ferroelasticity is investigated using a combination of analytical, first-principles and phenomenological methods. The class of material with Mexican-hat band edge is studied using the $alpha$-SnO monolayer as a prototype. Such band edge causes a van Hove singularity diverging with $frac{1}{sqrt{E}}$, and in p-type material leads to spatial and/or time-reversal spontaneous symmetry breaking. We show that an unexpected multiferroic phase is obtained in a range of hole density for which the material presents ferromagnetism and ferroelasticity simultaneously.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا