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تسجيل مستخدم جديدSynthesis and structural characterization of Sb-doped TiFe2Sn Heusler compounds
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Heusler compounds form a numerous class of intermetallics, which include two families of compositions ABC and AB2C, usually referred to as half- and full-Heusler compounds, respectively. Given their tunable electronic properties, made possible by adjusting the chemical composition, these materials are currently considered for the possible use in sustainable technologies such as solar energy and thermoelectric conversion. According to theoretical predictions, Sb substitution in the TiFe2Sn full-Heusler compound is thought to yield band structure modifications that should enhance the thermoelectric power factor. In this work we tested the phase stability and the structural and microstructural properties of such heavily-doped compounds. We synthesized polycrystalline TiFe2Sn1-xSbx samples (x=0,0.1,0.2 and 1.0) by arc melting, followed annealing. The structural characterization, performed by x-ray powder diffraction and microscopy analyses, confirmed the formation of the Heusler AB2C structure (cF16, Fm-3m, prototype: MnCu2Al) in all samples, with only few percent amounts of secondary phases and only slight deviations from nominal stoichiometry. With increasing Sb substitution we found a steady decrease of the lattice parameter, confirming that the replacement takes place at the Sn site. Quite unusually, the as cast samples exhibited a higher lattice contraction than the annealed ones. The fully substituted x=1.0 compound, again adopting the MnCu2Al structure, does not form as stoichiometric phase and turned out to be strongly Fe deficient.The physical behavior at room temperature indicated that annealing with increasing temperature is beneficial for electrical and thermoelectrical transport. Moreover, we measured a slight improvement of electrical and thermoelectrical properties in the x=0.1 sample and a suppression in the x=0.2 sample, as compared to the undoped x=0 sample.
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Epitaxial thin films of the substitutionally alloyed half-Heusler series CoTi$_{1-x}$Fe$_x$Sb were grown by molecular beam epitaxy on InAlAs/InP(001) substrates for concentrations 0.0$leq$x$leq$1.0. The influence of Fe on the structural, electronic,
and magnetic properties was studied and compared to that expected from density functional theory. The films are epitaxial and single crystalline, as measured by reflection high-energy electron diffraction and X-ray diffraction. Using in-situ X-ray photoelectron spectroscopy, only small changes in the valence band are detected for x$leq$0.5. For films with x$geq$0.05, ferromagnetism is observed in SQUID magnetometry with a saturation magnetization that scales linearly with Fe content. A dramatic decrease in the magnetic moment per formula unit occurs when the Fe is substitutionally alloyed on the Co site indicating a strong dependence on the magnetic moment with site occupancy. A crossover from both in-plane and out-of-plane magnetic moments to only in-plane moment occurs for higher concentrations of Fe. Ferromagnetic resonance indicates a transition from weak to strong interaction with a reduction in inhomogeneous broadening as Fe content is increased. Temperature-dependent transport reveals a semiconductor to metal transition with thermally activated behavior for x$leq$0.5. Anomalous Hall effect and large negative magnetoresistance (up to -18.5% at 100 kOe for x=0.3) are observed for higher Fe content films. Evidence of superparamagnetism for x=0.3 and x=0.2 suggests for moderate levels of Fe, demixing of the CoTi$_{1-x}$Fe$_x$Sb films into Fe rich and Fe deficient regions may be present. Atom probe tomography is used to examine the Fe distribution in a x=0.3 film. Statistical analysis reveals a nonhomogeneous distribution of Fe atoms throughout the film, which is used to explain the observed magnetic and electrical behavior.
We report a theoretical and experimental investigation of Cr-doped AlN. Density functional calculations predict that the isolated Cr t2 defect level in AlN is 1/3 full, falls approximately at midgap, and broadens into an impurity band for concentrati
ons over 5%. Substitutional Al1-xCrxN random alloys with 0.05 <= x <= 0.15 are predicted to have Curie temperatures over 600 K. Experimentally, we have characterized and optimized the molecular beam epitaxy thin film growth process, and observed room temperature ferromagnetism with a coercive field, Hc, of 120 Oersted. The measured magnetic susceptibility indicates that over 33% of the Cr is magnetically active at room temperature and 40% at low temperature.
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ach, we employ torque method to calculate the magnetoelastic tensor elements. We show that the torque based methods are in general computationally more efficient, and allow to unveil the atomic- and orbital-contributions to the magnetoelastic constants in an exact manner, as opposed to the conventional approaches based on second order perturbation with respect to the spin-orbit coupling. The magnetostriction constants are in good agreement with available experimental data. The results reveal that the main contribution to the magnetostriction constants, $lambda_{100}$ and $lambda_{111}$, arises primarily from the strained-induced modulation of the $langle d_{x^2-y^2}|hat{L}_z|d_{xy}rangle$ and $langle d_{z^2}|hat{L}_x|d_{yz}rangle$ spin orbit coupling matrix elements, respectively, of the Co atoms.
We studied the influence of sample preparation and defects in the superconducting properties samples using atomic ratios of Mg:B=1:1 and Mg:B=1:2. Samples were characterized by SEM, and XRD, and the magnetization properties were examined in a SQUID m
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