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تسجيل مستخدم جديدEmergence of Quantum Phase-Slip Behaviour in Superconducting NbN Nanowires: DC Electrical Transport and Fabrication Technologies
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Superconducting nanowires undergoing quantum phase-slips have potential for impact in electronic devices, with a high-accuracy quantum current standard among a possible toolbox of novel components. A key element of developing such technologies is to understand the requirements for, and control the production of, superconducting nanowires that undergo coherent quantum phase-slips. We present three fabrication technologies, based on using electron-beam lithography or neon focussed ion-beam lithography, for defining narrow superconducting nanowires, and have used these to create nanowires in niobium nitride with widths in the range of 20-250 nm. We present characterisation of the nanowires using DC electrical transport at temperatures down to 300 mK. We demonstrate that a range of different behaviours may be obtained in different nanowires, including bulk-like superconducting properties with critical-current features, the observation of phase-slip centres and the observation of zero conductance below a critical voltage, characteristic of coherent quantum phase-slips. We observe critical voltages up to 5 mV, an order of magnitude larger than other reports to date. The different prominence of quantum phase-slip effects in the various nanowires may be understood as arising from the differing importance of quantum fluctuations. Control of the nanowire properties will pave the way for routine fabrication of coherent quantum phase-slip nanowire devices for technology applications.
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Quantum phase slip (QPS) is the particular manifestation of quantum fluctuations of the order parameter of a current-biased quasi-1D superconductor. The QPS event(s) can be considered a dynamic equivalent of tunneling through conventional Josephson j
unction containing static in space and time weak link(s). At low temperatures T<<Tc the QPS effect leads to finite resistivity of narrow superconducting channels and suppresses persistent currents in tiny nanorings. Here we demonstrate that the quantum tunneling of phase may result in Coulomb blockade: superconducting nanowire, imbedded in high-Ohmic environment, below a certain bias voltage behaves as an insulator.
We have measured the resistance vs. temperature of more than 20 superconducting nanowires with nominal widths ranging from 10 to 22 nm and lengths from 100 nm to 1050 nm. With decreasing cross-sectional areas, the wires display increasingly broad res
istive transitions. The data are in very good agreement with a model that includes both thermally activated phase slips close to Tc and quantum phase slips (QPS) at low temperatures, but disagree with an earlier model based on a critical value of R_n/Rq. Our measurements provide strong evidence for QPS in thin superconducting wires.
The smaller the system, typically - the higher is the impact of fluctuations. In narrow superconducting wires sufficiently close to the critical temperature Tc thermal fluctuations are responsible for the experimentally observable finite resistance.
Quite recently it became possible to fabricate sub-10 nm superconducting structures, where the finite resistivity was reported within the whole range of experimentally obtainable temperatures. The observation has been associated with quantum fluctuations capable to quench zero resistivity in superconducting nanowires even at temperatures T-->0. Here we demonstrate that in tiny superconducting nanorings the same phenomenon is responsible for suppression of another basic attribute of superconductivity - persistent currents - dramatically affecting their magnitude, the period and the shape of the current-phase relation. The effect is of fundamental importance demonstrating the impact of quantum fluctuations on the ground state of a macroscopically coherent system, and should be taken into consideration in various nanoelectronic applications.
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e parent thin film, demonstrating that they have not been damaged by the nanopatterning. The current-voltage characteristics of the underdoped nanowires show large hysteretic voltage switching at the critical current, in contrast to the flux-flow like characteristics of optimally doped nanostructures, indicating the formation of a self-stabilizing hot spot. These results open up new possibilities of using the underdoped nanowires for single photon detection and for exploring the underdoped side of the YBa$_2$Cu$_3$O$_{7-{delta}}$ phase diagram at the nanoscale.
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