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We report on the demonstration of MoS2/GaN UV-visible photodetectors with high spectral responsivity both in UV and in visible regions as well as the observation of MoS2 band-edge in spectral responsivity. Multi-layer MoS2 flakes of thickness ~ 200 nm were exfoliated on epitaxial GaN-on-sapphire, followed by fabrication of detectors in a lateral Metal-Semiconductor-Metal (MSM) geometry with Ni/Au contacts which were insulated from the GaN layer underneath by Al2O3 dielectric. Devices exhibited distinct steps in spectral responsivity at 365 nm and at ~ 685 nm with a corresponding photo-to-dark current ratio of ~4000 and ~ 100 respectively. Responsivity of 0.1 A/W (at 10 V) was measured at 365 nm corresponding to GaN band edge, while the second band edge at ~ 685 nm is characterized by a spectral responsivity (SR) of ~ 33 A/W when accounted for the flake size, corresponding to the direct band gap at K point of multi-layer MoS2.
We present flexible photodetectors (PDs) for visible wavelengths fabricated by stacking centimetre-scale chemical vapour deposited (CVD) single layer graphene (SLG) and single layer CVD MoS2, both wet transferred onto a flexible polyethylene terephth
State-of-the-art fabrication and characterization techniques have been employed to measure the thermal conductivity of suspended, single-crystalline MoS2 and MoS2/hBN heterostructures. Two-laser Raman scattering thermometry was used combined with rea
We detect electroluminescence in single layer molybdenum disulphide (MoS2) field-effect transistors built on transparent glass substrates. By comparing absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find that they a
The emergence of transition metal dichalcogenides (TMDs) as 2D electronic materials has stimulated proposals of novel electronic and photonic devices based on TMD heterostructures. Here we report the determination of band offsets in TMD heterostructu
Large capacitance enhancement is useful for increasing the gate capacitance of field-effect transistors (FETs) to produce low-energy-consuming devices with improved gate controllability. We report strong capacitance enhancement effects in a newly eme