اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدStacked Wafer Gradient Index Silicon Optics with Integral Anti-reflection Layers
107
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Silicon optics with wide bandwidth anti-reflection (AR) coatings, made of multi-layer textured silicon surfaces, are developed for millimeter and submillimeter wavelengths. Single and double layer AR coatings were designed for an optimal transmission centered on 250 GHz, and fabricated using the DRIE (Deep Reaction Ion Etching) technique. Tests of high resistivity silicon wafers with single-layer coatings between 75 GHz and 330 GHz are presented and compared with the simulations.
قيم البحث
اقرأ أيضاً
Refractive optical elements are widely used in millimeter and sub-millimeter astronomical telescopes. High resistivity silicon is an excellent material for dielectric lenses given its low loss-tangent, high thermal conductivity and high index of refr
action. The high index of refraction of silicon causes a large Fresnel reflectance at the vacuum-silicon interface (up to 30%), which can be reduced with an anti-reflection (AR) coating. In this work we report techniques for efficiently AR coating silicon at sub-millimeter wavelengths using Deep Reactive Ion Etching (DRIE) and bonding the coated silicon to another silicon optic. Silicon wafers of 100 mm diameter (1 mm thick) were coated and bonded using the Silicon Direct Bonding technique at high temperature (1100 C). No glue is used in this process. Optical tests using a Fourier Transform Spectrometer (FTS) show sub-percent reflections for a single-layer DRIE AR coating designed for use at 320 microns on a single wafer. Cryogenic (10 K) measurements of a bonded pair of AR-coated wafers also reached sub-percent reflections. A prototype two-layer DRIE AR coating to reduce reflections and increase bandwidth is presented and plans for extending this approach are discussed.
We report on the development of coatings for a CCD detector optimized for use in a fixed dispersion UV spectrograph. Due to the rapidly changing index of refraction of Si, single layer broadband anti-reflection coatings are not suitable to increase q
uantum efficiency at all wavelengths of interest. Instead, we describe a creative solution that provides excellent performance over UV wavelengths. We describe progress in the development of a CCD detector with theoretical quantum efficiencies (QE) of greater than 60% at wavelengths from 120 to 300nm. This high efficiency may be reached by coating a backside illuminated, thinned, delta-doped CCD with a series of thin film anti-reflection coatings. The materials tested include MgF2 (optimized for highest performance from 120-150nm), SiO2 (150-180nm), Al2O3(180-240nm), MgO (200-250nm), and HfO2 (240-300nm). A variety of deposition techniques were tested and a selection of coatings which minimized reflectance on a Si test wafer were applied to live devices. We also discuss future uses and improvements, including graded and multi-layer coatings.
We used two novel approaches to produce sub-wavelength structure (SWS) anti-reflection coatings (ARC) on silicon for the millimeter and sub-millimeter (MSM) wave band: picosecond laser ablation and dicing with beveled saws. We produced pyramidal stru
ctures with both techniques. The diced sample, machined on only one side, had pitch and height of 350 $mu$m and 972 $mu$m. The two laser ablated samples had pitch of 180 $mu$m and heights of 720 $mu$m and 580 $mu$m; only one of these samples was ablated on both sides. We present measurements of shape and optical performance as well as comparisons to the optical performance predicted using finite element analysis and rigorous coupled wave analysis. By extending the measured performance of the one-sided diced sample to the two-sided case, we demonstrate 25 % band averaged reflectance of less than 5 % over a bandwidth of 97 % centered on 170 GHz. Using the two-sided laser ablation sample, we demonstrate reflectance less than 5 % over 83 % bandwidth centered on 346 GHz.
We present the design, simulation, and planned fabrication process of a flat high resistivity silicon gradient index (GRIN) lens for millimeter and submillimeter wavelengths with very low absorption losses. The gradient index is created by subwavelen
gth holes whose size increases with the radius of the lens. The effective refractive index created by the subwavelength holes is constant over a very wide bandwidth, allowing the fabrication of achromatic lenses up to submillimeter wavelengths. The designed GRIN lens was successfully simulated and shows an expected efficiency better than that of a classic silicon plano-concave spherical lens with approximately the same thickness and focal length. Deep reactive ion etching (DRIE) and wafer-bonding of several patterned wafers will be used to realize our first GRIN lens prototype.
The Anti Coincidence Shield (ACS) of the INTEGRAL SPI instrument provides an excellent sensitivity for the detection of Gamma Ray Bursts (GRBs) above ~ 75keV, but no directional and energy information is available. We studied the ACS response by usin
g GRBs with known localizations and good spectral information derived by other satellites. We derived a count rate to flux conversion factor for different energy ranges and studied its dependence on the GRB direction and spectral hardness. For a typical GRB spectrum, we found that 1 ACS count corresponds on average to ~ 1E-10 erg/cm^2 in the 75keV-1MeV range, for directions orthogonal to the satellite pointing axis. This is broadly consistent with the ACS effective area derived from the Monte Carlo simulations, but there is some indication that the latter slightly overestimates the ACS sensitivity, especially for directions close to the instrument axis.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
