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We introduce selective area grown hybrid InAs/Al nanowires based on molecular beam epitaxy, allowing arbitrary semiconductor-superconductor networks containing loops and branches. Transport reveals a hard induced gap and unpoisoned 2e-periodic Coulomb blockade, with temperature dependent 1e features in agreement with theory. Coulomb peak spacing in parallel magnetic field displays overshoot, indicating an oscillating discrete near-zero subgap state consistent with device length. Finally, we investigate a loop network, finding strong spin-orbit coupling and a coherence length of several microns. These results demonstrate the potential of this platform for scalable topological networks among other applications.
We analyze the evidence of Majorana zero modes in nanowires that came from tunneling spectroscopy and other experiments, and scout the path to topologically protected states that are of interest for quantum computing. We illustrate the importance of
We present a superconductor-semiconductor material system that is both scalable and monolithically integrated on a silicon substrate. It uses selective area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly on a high
Many present and future applications of superconductivity would benefit from electrostatic control of carrier density and tunneling rates, the hallmark of semiconductor devices. One particularly exciting application is the realization of topological
Semiconductor nanowires such as InAs and InSb are promising materials for studying Majorana zero-modes and demonstrating non-Abelian particle exchange relevant for topological quantum computing. While evidence for Majorana bound states in nanowires h
We report on the precise integration of nm-scale topological insulator Josephson junctions into mm-scale superconducting quantum circuits via selective area epitaxy and local stencil lithography. By studying dielectric losses of superconducting micro