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The consequences of coupling magnetic and elastic degrees of freedom, where spins and deformations are carried by point-like objects subject to local interactions, are studied, theoretically and by detailed numerical simulations. From the constrained Lagrangians we derive consistent equations of motion for the coupled dynamical variables. In order to probe the dynamics of such a system, we consider external perturbations, such as spin transfer torques for the magnetic part, and homogeneous stresses for the elastic part, associated to their corresponding damping. This approach is applied to the study of ultrafast switching processes in anti-ferromagnetic systems, which have recently attracted attention as candidates for anti-ferromagnetic spintronic devices. Our strategy is then checked in simple, but instructive, situations. We carried out numerical experiments to study, in particular, how the magnetostrictive coupling and external stresses affect the nature of the switching processes in a prototype anti-ferromagnetic material.
We investigate an interfacial spin-transfer torque and $beta$-term torque with alternating current (AC) parallel to a magnetic interface. We find that both torques are resonantly enhanced as the AC frequency approaches to the exchange splitting energ
We report the theoretical investigation of noise spectrum of spin current and spin transfer torque for non-colinear spin polarized transport in a spin-valve device which consists of normal scattering region connected by two ferromagnetic electrodes.
We calculate the spin-transfer torque in Fe/MgO/Fe tunnel junctions and compare the results to those for all-metallic junctions. We show that the spin-transfer torque is interfacial in the ferromagnetic layer to a greater degree than in all-metallic
We demonstrate optical manipulation of the position of a domain wall in a dilute magnetic semiconductor, GaMnAsP. Two main contributions are identified. Firstly, photocarrier spin exerts a spin transfer torque on the magnetization via the exchange in
A practical problem for memory applications involving perpendicularly magnetized magnetic tunnel junctions is the reliability of switching characteristics at high-bias voltage. Often it has been observed that at high-bias, additional error processes