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تسجيل مستخدم جديدExact solutions for silicon photomultipliers models and application to measurements
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Enrico Junior Schioppa
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Dark count rate and correlated noise rate are among the main parameters that characterize silicon photomultipliers (SiPM). Typically, these parameters are evaluated by applying approximate formulas, or by fitting specific models, to the measured SiPM noise spectra. Here a novel approach is presented, where exact formulas are derived from a statistical model of dark counts and correlated noise generation. The method allows one to measure the true value of such parameters from the areas of just the first peaks in the dark spectrum. A numerical analysis shows the accuracy of the method.
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A novel photon detector, the Silicon Photomultiplier (SiPM), has been tested in proximity focusing Ring Imaging Cherenkov (RICH) counters that were exposed to cosmic-ray particles in Ljubljana, and a 2 GeV electron beam at the KEK research facility.
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This paper describes an experimental setup that has been developed to measure and characterise properties of Silicon Photomultipliers (SiPM). The measured SiPM properties are of general interest for a multitude of potential applications and comprise
the Photon Detection Efficiency (PDE), the voltage dependent cross-talk and the after-pulse probabilities. With the described setup the absolute PDE can be determined as a function of wavelength covering a spectral range from 350 to 1000nm. In addition, a method is presented which allows to study the pixel uniformity in terms of the spatial variations of sensitivity and gain. The results from various commercially available SiPMs - three HAMAMATSU MPPCs and one SensL SPM - are presented and compared.
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