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First-principles studies often rely on the assumption of equilibrium, which can be a poor approximation, e.g., for growth. Here, an effective chemical potential method for non-equilibrium systems is developed. A salient feature of the theory is that it maintains the equilibrium limits as the correct limit. In application to molecular beam epitaxy, rate equations are solved for the concentrations of small clusters, which serve as feedstock for growth. We find that the effective chemical potential is determined by the most probable, rather than by the lowest-energy, cluster. In the case of Bi2Se3, the chemical potential is found to be highly supersaturated, leading to a high nucleus concentration in agreement with experiment.
SrxBi2Se3 is a candidate topological superconductor but its superconductivity requires the intercalation of Sr by into the van-der-Waals gaps of Bi2Se3. We report the synthesis of SrxBi2Se3 thin films by molecular beam epitaxy, and we characterize th
Layered van der Waals (vdW) materials grown by physical vapor deposition techniques are generally assumed to have a weak interaction with the substrate during growth. This leads to films with relatively small domains that are usually triangular and a
We report the growth of self-assembled Bi2Se3 quantum dots (QDs) by molecular beam epitaxy on GaAs substrates using the droplet epitaxy technique. The QD formation occurs after anneal of Bismuth droplets under Selenium flux. Characterization by atomi
High-index Bi2Se3(221) film has been grown on In2Se3-buffered GaAs(001), in which a much retarded strain relaxation dynamics is recorded. The slow strain-relaxation process of in epitaxial Bi2Se3(221) can be attributed to the layered structure of Bi2
Epitaxial layers of the topological insulator Bi2Se3 have been grown by molecular beam epitaxy on laterally lattice-matched InP(111)B substrates. High resolution X-ray diffraction shows a significant improvement of Bi2Se3 crystal quality compared to