ﻻ يوجد ملخص باللغة العربية
Revealing phase transitions of solids through mechanical anomalies in the friction of nanotips sliding on their surfaces is an unconventional and instructive tool for continuous transitions, unexplored for first-order ones. Owing to slow nucleation, first-order structural transformations generally do not occur at the precise crossing of free energies, but hysteretically, near the spinodal temperatures where, below and above the thermodynamic transition temperature, one or the other metastable free energy branches terminates. The spinodal transformation, a collective one-shot event with no heat capacity anomaly, is easy to trigger by a weak external perturbations. Here we propose that even the gossamer mechanical action of an AFM tip may locally act as a surface trigger, narrowly preempting the spontaneous spinodal transformation, and making it observable as a nanofrictional anomaly. Confirming this expectation, the CCDW-NCCDW first-order transition of the important layer compound 1T-TaS$_2$ is shown to provide a demonstration of this effect.
A damping-like spin orbit torque (SOT) is a prerequisite for ultralow power spin logic devices. Here, we report on the damping-like SOT in just one monolayer of the conducting transition metal dichalcogenide (TMD) TaS$_2$ interfaced with a NiFe (Py)
1T-TaS$_2$ undergoes successive phase transitions upon cooling and eventually enters an insulating state of mysterious origin. Some consider this state to be a band insulator with interlayer stacking order, yet others attribute it to Mott physics tha
We present a state-of-the-art density functional theory (DFT) study which models crucial features of the partially disordered orbital order stacking in the prototypical layered transition metal dichalcogenide 1T-TaS2 . Our results not only show that
New theoretical proposals and experimental findings on transition metal dichalcogenide 1T-TaS$_2$ have revived interests in its possible Mott insulating state. We perform a comprehensive scanning tunneling microscopy and spectroscopy experiment on di
The ability to tune material properties using gate electric field is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as gate-electric-field induced superconductivity and