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We report ferroelectric ordering in Ni substituted CaBaCo4O7. Magnetization showed ferrimagnetic transition at 60 K and an additional transition is found ~ 82 K, further, enhanced antiferromagnetic interactions and decrease in saturation magnetization are noticed with Ni substitution. The dielectric and pyroelectric measurements illustrate a strong coupling between spin and charge degrees of freedom; ferroelectric behavior is confirmed with enhanced ordering temperature (~82 K) and saturation polarization (250 muC/m2. Neutron diffraction has revealed an increase in c-lattice parameter in Ni sample and all the Co/Ni moments are reoriented in a- direction; evidently a non-collinear ferrimagnetic to collinear ferrimagnetic spin order is observed. The coupling between the triangular and Kagome layers weakens and leads to up-up-down-down AFM ordering in the Kagoma layer. This can be viewed as a 2D-collinear layer with unequal bond distances and most likely responsible for the switching of electric polarization.
Magnetic properties of graphenic carbon nanostructures, relevant for future spintronic applications, depend crucially on doping and on the presence of defects. In this paper we study the magnetism of the recently detected substitutional Ni (Ni(sub))
Ni-Mn-Ga is interesting as a prototype of a magnetic shape-memory alloy showing large magnetic field induced strains. We present here results for the magnetic ordering of Mn-rich Ni-Mn-Ga alloys based on both experiments and theory. Experimental tren
Since its birth in the 1990s, semiconductor spintronics has suffered from poor compatibility with ferromagnets as sources of spin. While the broken inversion symmetry of some semiconductors may alternatively allow for spin-charge interconversion, its
We investigated domain kinetics by measuring the polarization switching behaviors of polycrystalline Pb(Zr,Ti)O$_{3}$ films, which are widely used in ferroelectric memory devices. Their switching behaviors at various electric fields and temperatures
The electric field control of functional properties is a crucial goal in oxide-based electronics. Non-volatile switching between different resistivity or magnetic states in an oxide channel can be achieved through charge accumulation or depletion fro