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Evolution of electronic inhomogeneities with back-gate voltage in graphene on SiO$_2$ was studied using room temperature scanning tunneling microscopy and spectroscopy. The reversal of local contrast in some places in the STS maps and sharp changes in cross-correlations between topographic and conductance maps, when graphene Fermi energy approaches its Dirac point, are attributed to change in charge-state of interface defects. The spatial correlations in the conductance maps, described by two different length scales and their growth during approach to Dirac point, show a qualitative agreement with the predictions of the screening theory of graphene. Thus a sharp change in the two length-scales close to the Dirac point, seen in our experiments, is interpreted in terms of the change in charge state of some of the interface defects. A systematic understanding and control of the charge state of defects will help in memory applications of graphene.
The electronic states at graphene-SiO$_2$ interface and their inhomogeneity was investigated using the back-gate-voltage dependence of local tunnel spectra acquired with a scanning tunneling microscope. The conductance spectra show two, or occasional
We study the intervalley scattering in defected graphene by low-temperature transport measurements. The scattering rate is strongly suppressed when defects are charged. This finding highlights screening of the short-range part of a potential by the l
In this paper, we study the quantum properties of a bilayer graphene with (asymmetry) line defects. The localized states are found around the line defects. Thus, the line defects on one certain layer of the bilayer graphene can lead to an electric tr
Defects in solid commonly limit mechanical performance of the material. However, recent measurements reported that the extraordinarily high strength of graphene is almost retained with the presence of grain boundaries. We clarify in this work that la
The magnetic field-dependent longitudinal and Hall components of the resistivity rho_xx(H) and rho_xy(H) are measured in graphene on silicon dioxide substrates at temperatures from 1.6 K to room temperature. At charge densities near the charge-neutra