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Microcavity exciton polaritons are promising candidates to build a new generation of highly nonlinear and integrated optoelectronic devices. Such devices range from novel coherent light emitters to reconfigurable potential landscapes for electro-optical polariton-lattice based quantum simulators as well as building blocks of optical logic architectures. Especially for the latter, the strongly interacting nature of the light-matter hybrid particles has been used to facilitate fast and efficient switching of light by light, something which is very hard to achieve with weakly interacting photons. We demonstrate here that polariton transistor switches can be fully integrated in electro-optical schemes by implementing a one-dimensional polariton channel which is operated by an electrical gate rather than by a control laser beam. The operation of the device, which is the polariton equivalent to a field-effect transistor, relies on combining electro-optical potential landscape engineering with local exciton ionization to control the scattering dynamics underneath the gate. We furthermore demonstrate that our device has a region of negative differential resistance and features a completely new way to create bistable behavior.
We present a time-resolved study of the logical operation of a polariton condensate transistor switch. Creating a polariton condensate (source) in a GaAs ridge-shaped microcavity with a non-resonant pulsed laser beam, the polariton propagation toward
We report on the effect of noise on the characteristics of the bistable polariton emission system. The present experiment provides a time resolved access to the polariton emission intensity. We evidence the noise-induced transitions between the two s
We show that a Spin Field Effect Transistor, realized with a semiconductor quantum wire channel sandwiched between half-metallic ferromagnetic contacts, can have Fano resonances in the transmission spectrum. These resonances appear because the ferrom
In this report we demonstrate a novel concept for a planar cavity polariton beam amplifier using non-resonant excitation. In contrast to resonant excitation schemes, background carriers are injected which form excitons, providing both gain and a repu
Fundamental physical properties limiting the performance of spin field effect transistors are compared to those of ordinary (charge-based) field effect transistors. Instead of raising and lowering a barrier to current flow these spin transistors use