اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدDirect experimental observation of nonclassicality in ensembles of single photon emitters
106
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
In this work we experimentally demonstrate for the first time a recently proposed criterion adressed to detect nonclassical behavior in the fluorescence emission of ensembles of single-photon emitters. In particular, we apply the method to study clusters of NV centres in diamond observed via single-photon-sensitive confocal microscopy. Theoretical considerations on the behavior of the parameter at any arbitrary order in presence of poissonian noise are presented and, finally, the opportunity of detecting manifold coincidences is discussed.
قيم البحث
اقرأ أيضاً
In a recent paper [R. Alicki and N. Van Ryn, J. Phys. A: Math. Theor., 41, 062001 (2008)] a test of nonclassicality for a single qubit was proposed. Here, we discuss the class of local realistic theories to which this test applies and present an experimental realization.
We report the experimental reconstruction of a nonclassicality quasiprobability for a single-photon added thermal state. This quantity has significant negativities, which is necessary and sufficient for the nonclassicality of the quantum state. Our m
ethod presents several advantages compared to the reconstruction of the P function, since the nonclassicality filters used in this case can regularize the quasiprobabilities as well as their statistical uncertainties. A-priori assumptions about the quantum state are therefore not necessary. We also demonstrate that, in principle, our method is not limited by small quantum efficiencies.
Topology manifesting in many branches of physics deepens our understanding on state of matters. Topological photonics has recently become a rapidly growing field since artificial photonic structures can be well designed and constructed to support top
ological states, especially a promising large-scale implementation of these states using photonic chips. Meanwhile, due to the inapplicability of Hall conductance to photons, it is still an elusive problem to directly measure the integer topological invariants and topological phase transitions for photons. Here, we present a direct observation of topological winding numbers by using bulk-state photon dynamics on a chip. Furthermore, we for the first time experimentally observe the topological phase transition points via single-photon dynamics. The integrated topological structures, direct measurement in the single-photon regime and strong robustness against disorder add the key elements into the toolbox of `quantum topological photonics and may enable topologically protected quantum information processing in large scale.
We illustrate the existence of single-excitation bound states for propagating photons interacting with $N$ two-level atoms. These bound states can be calculated from an effective spin model, and their existence relies on dissipation in the system. Th
e appearance of these bound states is in a one-to-one correspondence with zeros in the single-photon transmission and with divergent bunching in the second-order photon-photon correlation function. We also formulate a dissipative version of Levinsons theorem for this system by looking at the relation between the number of bound states and the winding number of the transmission phases. This theorem allows a direct experimental measurement of the number of bound states using the measured transmission phases.
We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer usually employe
d for integrated photonics. Single photon emission is demonstrated over the [1.1,1.55]-$mu$m range, spanning the O- and C-telecom bands. We analyse their photoluminescence spectrum, dipolar emission and optical relaxation dynamics at 10K. For a specific family, we show a constant emission intensity at saturation from 10K to temperatures well above the 77K-liquid nitrogen temperature. Given the advanced control over nanofabrication and integration in silicon, these novel artificial atoms are promising candidates for Si-based quantum technologies.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
