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Using recently available GaN FETs, a 600 Volt three-stage, multi-FET switch has been developed having 2 nanosecond rise time driving a 200 Ohm load with the potential of approaching 30 MHz average switching rates. Possible applications include driving particle beam choppers kicking bunch-by-bunch and beam deflectors where the rise time needs to be custom tailored. This paper reports on the engineering issues addressed, the design approach taken and some performance results of this switch.
A broadband travelling wave kicker operating with 80 MHz repetition rates is required for the new PIP-II accelerator at Fermilab. We present a technique to drive simultaneously four series-connected enhancement mode GaN-on-silicon power transistors b
High-repetition-rate sources of bright electron bunches have a wide range of applications. They can directly be employed as probes in electron-scattering setups, or serve as a backbone for the generation of radiation over a broad range of the electro
Attosecond pulses, produced through high-order harmonic generation in gases, have been successfully used for observing ultrafast, sub-femtosecond electron dynamics in atoms, molecules and solid state systems. Todays typical attosecond sources, howeve
We propose and numerically validate an all-optical scheme to generate optical pulse trains with varying temporal pulse-to-pulse delay and pulse duration. Applying a temporal sinusoidal phase modulation followed by a shaping of the spectral phase enab
We experimentally demonstrate that the transmission of a 1030~nm, 1.3~ps laser beam of 100 mJ energy through fog increases when its repetition rate increases to the kHz range. Due to the efficient energy deposition by the laser filaments in the air,