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We report measurements on yttrium iron garnet (YIG) thin films grown on both gadolinium gallium garnet (GGG) and yttrium aluminium garnet (YAG) substrates, with and without thin Pt top layers. We provide three principal results: the observation of an interfacial region at the Pt/YIG interface, we place a limit on the induced magnetism of the Pt layer and confirm the existence of an interfacial layer at the GGG/YIG interface. Polarised neutron reflectometry (PNR) was used to give depth dependence of both the structure and magnetism of these structures. We find that a thin film of YIG on GGG is best described by three distinct layers: an interfacial layer near the GGG, around 5 nm thick and non-magnetic, a magnetic bulk phase, and a non-magnetic and compositionally distinct thin layer near the surface. We theorise that the bottom layer, which is independent of the film thickness, is caused by Gd diffusion. The top layer is likely to be extremely important in inverse spin Hall effect measurements, and is most likely Y2O3 or very similar. Magnetic sensitivity in the PNR to any induced moment in the Pt is increased by the existence of the Y2O3 layer; any moment is found to be less than 0.02 uB/atom.
We studied the structural and magnetic properties of FeC~thin films deposited by co-sputtering of Fe and C targets in a direct current magnetron sputtering (dcMS) process at a substrate temperature (Ts) of 300, 523 and 773,K. The structure and morpho
Transparent pure and Cu-doped (2.5, 5 and 10 at. %) anatase TiO2 thin films were grown by pulsed laser deposition technique on LaAlO3 substrates. The samples were structurally characterized by X-ray absorption spectroscopy and X-ray diffraction. The
The electronic and magnetic properties of transition metal dichalcogenides are known to be extremely sensitive to their structure. In this paper we study the effect of structure on the electronic and magnetic properties of mono- and bilayer $VSe_2$ f
The correlation between magnetic and structural properties of Co_{2} FeAl (CFA) thin films of different thickness (10 nm<d< 100 nm) grown at room temperature on MgO-buffered Si/SiO2 substrates and annealed at 600lyxmathsym{textdegree}C has been studi
We investigated structural, magnetic and electrical properties of sputter deposited Mn-Fe-Ga compounds. The crystallinity of the Mn-Fe-Ga thin films was confirmed using x-ray diffraction. X-ray reflection and atomic force microscopy measurements were