اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدLateral p-n Junction in an Inverted InAs/GaSb Double Quantum Well
79
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We present transport measurements on a lateral p-n junction in an inverted InAs/GaSb double quantum well at zero and nonzero perpendicular magnetic fields. At a zero magnetic field, the junction exhibits diodelike behavior in accordance with the presence of a hybridization gap. With an increasing magnetic field, we explore the quantum Hall regime where spin-polarized edge states with the same chirality are either reflected or transmitted at the junction, whereas those of opposite chirality undergo a mixing process, leading to full equilibration along the width of the junction independent of spin. These results lay the foundations for using p-n junctions in InAs/GaSb double quantum wells to probe the transition between the topological quantum spin Hall and quantum Hall states.
قيم البحث
اقرأ أيضاً
Transport measurements in inverted InAs/GaSb quantum wells reveal a giant spin-orbit splitting of the energy bands close to the hybridization gap. The splitting results from the interplay of electron-hole mixing and spin-orbit coupling, and can excee
d the hybridization gap. We experimentally investigate the band splitting as a function of top gate voltage for both electron-like and hole-like states. Unlike conventional, noninverted two-dimensional electron gases, the Fermi energy in InAs/GaSb can cross a single spin-resolved band, resulting in full spin-orbit polarization. In the fully polarized regime we observe exotic transport phenomena such as quantum Hall plateaus evolving in $e^2/h$ steps and a non-trivial Berry phase.
We report on the observation of photogalvanic effects induced by terahertz radiation in type-II GaSb/InAs quantum wells with inverted band order. Photocurrents are excited at oblique incidence of radiation and consists of several contributions varyin
g differently with the change of the radiation polarization state; the one driven by the helicity and the other one driven by the linearly polarization of radiation are of comparable magnitudes. Experimental and theoretical analyses reveal that the photocurrent is dominated by the circular and linear photogalvanic effects in a system with a dominant structure inversion asymmetry. A microscopic theory developed in the framework of the Boltzmann equation of motion considers both photogalvanic effects and describes well all the experimental findings.
We investigate charge transport through the junction between a niobium superconductor and the edge of a two-dimensional electron-hole bilayer, realized in an InAs/GaSb double quantum well. For the transparent interface with a superconductor, we demon
strate that the junction resistance is determined by the interlayer charge transfer near the interface. From an analysis of experimental $I-V$ curves we conclude that the proximity induced superconductivity efficiently couples electron and hole layers at low currents. The critical current demonstrates periodic dependence on the in-plane magnetic field, while it is monotonous for the field which is normal to the bilayer plane.
We experimentally investigate transport through the side junction between a niobium superconductor and the mesa edge of a two-dimensional system, realized in an InAs/GaSb double quantum well with band inversion. We demonstrate, that different transpo
rt regimes can be achieved by variation of the mesa step. We observe anomalous behavior of Andreev reflection within a finite low-bias interval, which is invariant for both transport regimes. We connect this behavior with the transition from retro- (at low biases) to specular (at high ones) Andreev reflection channels in an InAs/GaSb double quantum well with band inversion.
Transport measurements are performed on InAs/GaSb double quantum wells at zero and finite magnetic fields applied parallel and perpendicular to the quantum wells. We investigate a sample in the inverted regime where electrons and holes coexist, and c
ompare it with another sample in the non-inverted semiconducting regime. Activated behavior in conjunction with a strong suppression of the resistance peak at the charge neutrality point in a parallel magnetic field attest to the topological hybridization gap between electron and hole bands in the inverted sample. We observe an unconventional Landau level spectrum with energy gaps modulated by the magnetic field applied perpendicular to the quantum wells. This is caused by strong spin-orbit interaction provided jointly by the InAs and the GaSb quantum wells.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
