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Anisotropy describes the directional dependence of a materials properties such as transport and optical response. In conventional bulk materials, anisotropy is intrinsically related to the crystal structure, and thus not tunable by the gating techniques used in modern electronics. Here we show that, in bilayer black phosphorus with an interlayer twist angle of 90{deg}, the anisotropy of its electronic structure and optical transitions is tunable by gating. Using first-principles calculations, we predict that a laboratory-accessible gate voltage can induce a hole effective mass that is 30 times larger along one Cartesian axis than along the other axis, and the two axes can be exchanged by flipping the sign of the gate voltage. This gate-controllable band structure also leads to a switchable optical linear dichroism, where the polarization of the lowest-energy optical transitions (absorption or luminescence) is tunable by gating. Thus, anisotropy is a tunable degree of freedom in twisted bilayer black phosphorus.
We explore the possibility of using van dar Waals bonded heterostructures of stacked together 2D bilayer black phosphorus (BP) for nanoscale device applications. The electronic property of BP in AA stacking and 90{deg} twisted is studied with density
We report the infrared transmission measurement on electrically gated twisted bilayer graphene. The optical absorption spectrum clearly manifests the dramatic changes such as the splitting of inter-linear-band absorption step, the shift of inter-van
Optical and electronic properties of black phosphorus strongly depend on the number of layers and type of stacking. Using first-principles calculations within the framework of density functional theory, we investigate the electronic properties of bil
In this paper, the electronic properties of 30{deg} twisted double bilayer graphene, which loses the translational symmetry due to the incommensurate twist angle, are studied by means of the tight-binding approximation. We demonstrate the interlayer
Recently, intriguing physical properties have been unraveled in anisotropic layered semiconductors with the in-plane anisotropy often originates directly from the low crystallographic symmetry. However, little has been known about the systems where t