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تسجيل مستخدم جديدIrradiation study of UV Silicon Photomultipliers for the Mu2e Calorimeter
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The Mu2e calorimeter is composed of 1400 un-doped CsI crystals, coupled to large area UV extended Silicon Photomultipliers (SiPMs), arranged in two annular disks. This calorimeter has to provide precise information on energy, timing and position resolutions. It should also be fast enough to handle the high rate background and it must operate and survive in the high radiation environment. Simulation studies estimated that, in the highest irradiated regions, each photo-sensor will absorb a dose of 20 krad and will be exposed to a neutron fluency of 5.5x10^11 n_(1MeV)/cm^2 in three years of running, with a safety factor of 3 included. At the end of 2015, we have concluded an irradiation campaign at the Frascati Neutron Generator (FNG, Frascati, Italy) measuring the response of two different 16 array models from Hamamatsu, which differ for the protection windows and a SiPM from FBK. In 2016, we have carried out two additional irradiation campaigns with neutrons and photons at the Helmholtz-Zentrum Dresden-Rossendorf (HZDR, Dresden, Germany) and at the Calliope gamma irradiation facility at ENEA-Casaccia, respectively. A negligible increment of the leakage current and no gain change have been observed with the dose irradiation. On the other hand, at the end of the neutron irradiation, the gain does not show large changes whilst the leakage current increases by around a factor of 2000. In these conditions, the too high leakage current makes problematic to bias the SiPMs, thus requiring to cool them down to a running temperature of ~0 {deg}C.
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The Mu2e electromagnetic calorimeter has to provide precise information on energy, time and position for $sim$100 MeV electrons. It is composed of 1348 un-doped CsI crystals, each coupled to two large area Silicon Photomultipliers (SiPMs). A modular
and custom SiPM layout consisting of a 3$times$2 array of 6$times$6 mm$^2$ UV-extended monolithic SiPMs has been developed to fulfill the Mu2e calorimeter requirements and a pre-production of 150 prototypes has been procured by three international firms (Hamamatsu, SensL and Advansid). A detailed quality assurance process has been carried out on this first batch of photosensors: the breakdown voltage, the gain, the quenching time, the dark current and the Photon Detection Efficiency (PDE) have been determined for each monolithic cell of each SiPMs array. One sample for each vendor has been exposed to a neutron fluency up to $sim$8.5~$times$~10$^{11}$ 1 MeV (Si) eq. n/cm$^{2}$ and a linear increase of the dark current up to tens of mA has been observed. Others 5 samples for each vendor have undergone an accelerated aging in order to verify a Mean Time To Failure (MTTF) higher than $sim$10$^{6}$ hours.
Silicon Photomultipliers with cell-pitch ranging from 12 $mu$m to 20 $mu$m were tested against neutron irradiation at moderate fluences to study their performance for calorimetric applications. The photosensors were developed by FBK employing the RGB
-HD technology. We performed irradiation tests up to $2 times 10^{11}$ n/cm$^2$ (1 MeV eq.) at the INFN-LNL Irradiation Test facility. The SiPMs were characterized on-site (dark current and photoelectron response) during and after irradiations at different fluences. The irradiated SiPMs were installed in the ENUBET compact calorimetric modules and characterized with muons and electrons at the CERN East Area facility. The tests demonstrate that both the electromagnetic response and the sensitivity to minimum ionizing particles are retained after irradiation. Gain compensation can be achieved increasing the bias voltage well within the operation range of the SiPMs. The sensitivity to single photoelectrons is lost at $sim 10^{10}$ n/cm$^2$ due to the increase of the dark current.
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