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We study the magnetic properties of the adatom systems on a semiconductor surface Si(111):{C,Si,Sn,Pb} - ($sqrt{3} times sqrt{3}$). On the basis of all-electron density functional theory calculations we construct effective low-energy models taking into account spin-orbit coupling and electronic correlations. In the ground state the surface nanostructures are found to be insulators with the non-collinear 120$^{circ}$ Neel (for C, Si, Sn monolayer coverages) and 120$^{circ}$ row-wise (for Pb adatom) antiferromagnetic orderings. The corresponding spin Hamiltonians with anisotropic exchange interactions are derived by means of the superexchange theory and the calculated Dzyaloshinskii-Moriya interactions are revealed to be very strong and compatible with the isotropic exchange couplings in the systems with Sn and Pb adatoms. To simulate the excited magnetic states we solve the constructed spin models by means of the Monte Carlo method. At low temperatures and zero magnetic field we observe complex spin spiral patterns in Sn/Si(111) and Pb/Si(111). On this basis the formation of antiferromagnetic skyrmion lattice states in adatom $sp$ electron systems in strong magnetic fields is discussed.
We investigate the 1/3 monolayer $alpha$-Pb/Si(111) surface by scanning tunneling spectroscopy (STS) and fully relativistic first-principles calculations. We study both the high-temperature $sqrt{3}timessqrt{3}$ and low-temperature $3times 3$ reconst
Just like insulators can host topological Dirac states at their edges, superconductors can also exhibit topological phases characterized by Majorana edge states. Remarkable zero-energy states have been recently observed at the two ends of proximity i
We demonstrate the injection of pure valley-orbit currents in multi-valley semiconductors and present the theory of this effect. We studied photo-induced transport in $n$-doped (111)-oriented silicon metal-oxide-semiconductor field effect transistors
Atomic layers deposited on semiconductor substrates introduce a platform for the realization of the extended electronic Hubbard model, where the consideration of electronic repulsion beyond the onsite term is paramount. Recently, the onset of superco
The valley-orbit coupling in a few-electron Si quantum dot is expected to be a function of its occupation number N. We study the spectrum of multivalley Si quantum dots for 2 <= N <= 4, showing that, counterintuitively, electron-electron interaction