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Semiconductor quantum dots (QDs) offer a platform to explore the physics of quantum electronics including spins. Electron spins in QDs are considered good candidates for quantum bits in quantum information processing, and spin control and readout have been established down to a single electron level. We use these techniques to explore spin dynamics in a hybrid system, namely a QD coupled to a two dimensional electronic reservoir. The proximity of the lead results in relaxation dynamics of both charge and spin, the mechanism of which is revealed by comparing the charge and spin signal. For example, higher order charge tunneling events can be monitored by observing the spin. We expect these results to stimulate further exploration of spin dynamics in QD-lead hybrid systems and expand the possibilities for controlled spin manipulations.
We analyze time evolution of charge and spin states in a quantum dot coupled to an electric reservoir. Utilizing high-speed single-electron detection, we focus on dynamics induced by the first-order tunneling. We find that there is a difference betwe
We study the low-energy transport properties of a hybrid device composed by a native quantum dot coupled to both ends of a topological superconducting nanowire section hosting Majorana zero-modes. The account of the coupling between the dot and the f
We report electronic transport measurements through a silicon hybrid double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting
Quantum system abruptly driven from its stationary phase can reveal nontrivial dynamics upon approaching a new final state. We investigate here such dynamics for a correlated quantum dot sandwiched between the metallic and superconducting leads, cons
We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The tunneling