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We present a theoretical study of the anisotropy of the spin relaxation and decoherence in typical quantum wells with an arbitrary magnetic field. In such systems, the orientation of the magnetic field relative to the main crystallographic directions is crucial, owing to the lack of spin-rotation symmetry. For typical high mobility samples, relaxation anisotropies in the motional narrowing limit owing to the interplay of Rashba and Dresselhaus spin orbit coupling are calculated. We also include the effect of the cubic-in-momentum terms. Although commonly ignored in literature, the latter were experimentally evidenced by the observation of strong anisotropy in spin decoherence measurements by different experimental groups and has long remained unexplained.
We study the depolarization of optically oriented electrons in quantum wells subjected to an in-plane magnetic field and show that the Hanle curve drastically depends on the carrier mobility. In low-mobility structures, the Hanle curve is described b
Employing state-of-the-art molecular beam epitaxy techniques to grow thin, modulation-doped AlAs quantum wells, we have achieved a low temperature mobility of 5.5 m$^2$/Vs with out-of-plane occupation, an order of magnitude improvement over previous
We studied a doping series of (110)-oriented AlAs quantum wells (QWs) and observed transport evidence of single anisotropic-mass valley occupancy for the electrons in a 150 AA wide QW. Our calculations of strain and quantum confinement for these samp
We measure simultaneously the in-plane electron g-factor and spin relaxation rate in a series of undoped inversion-asymmetric (001)-oriented GaAs/AlGaAs quantum wells by spin-quantum beat spectroscopy. In combination the two quantities reveal the abs
Coherent electron spin dynamics in 10-nm-wide InGaAs/InAlAs quantum wells is studied from 10 K to room temperature using time-resolved Kerr rotation. The spin lifetime exceeds 1 ns at 10 K and decreases with temperature. By varying the spatial overla