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Thin n-in-p planar pixel modules for the ATLAS upgrade at HL-LHC

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 نشر من قبل Natascha Savic
 تاريخ النشر 2016
  مجال البحث فيزياء
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The ATLAS experiment will undergo a major upgrade of the tracker system in view of the high luminosity phase of the LHC (HL-LHC) foreseen to start around 2025. Thin planar pixel modules are promising candidates to instrument the new pixel system, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. New designs of the pixel cells, with an optimized biasing structure, have been implemented in n-in-p planar pixel productions with sensor thicknesses of 270 um. Using beam tests, the gain in hit efficiency is investigated as a function of the received irradiation fluence. The outlook for future thin planar pixel sensor productions will be discussed, with a focus on thin sensors with a thickness of 100 and 150 um and a novel design with the optimized biasing structure and small pixel cells (50 um x 50 um and 25 um x 100 um). These dimensions are foreseen for the new ATLAS read-out chip in 65 nm CMOS technology and the fine segmentation will represent a challenge for the tracking in the forward region of the pixel system at HL-LHC. To predict the performance of 50 um x 50 um pixels at high eta, FE-I4 compatible planar pixel sensors have been studied before and after irradiation in beam tests at high incidence angle with respect to the short pixel direction. Results on cluster shapes, charge collection- and hit efficiency will be shown.



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The ATLAS experiment will undergo around the year 2025 a replacement of the tracker system in view of the high luminosity phase of the LHC (HL-LHC) with a new 5-layer pixel system. Thin planar pixel sensors are promising candidates to instrument the innermost region of the new pixel system, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. The sensors of 50-150 $mu$m thickness, interconnected to FE-I4 read-out chips, have been characterized with radioactive sources and beam tests. In particular active edge sensors have been investigated. The performance of two differe
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