ترغب بنشر مسار تعليمي؟ اضغط هنا

Ultrafast x-ray diffraction of a ferroelectric soft mode driven by broadband terahertz pulses

427   0   0.0 ( 0 )
 نشر من قبل Sebastian Gr\\\"ubel
 تاريخ النشر 2016
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

Intense, few-cycle pulses in the terahertz frequency range have strong potential for schemes of control over vibrational modes in solid-state materials in the electronic ground-state. Here we report an experiment using single cycle terahertz pulses to directly excite lattice vibrations in the ferroelectric material $mathrm{Sn_2P_2S_6}$ and ultrafast x-ray diffraction to quantify the resulting structural dynamics. A model of a damped harmonic oscillator driven by the transient electric field of the terahertz pulses describes well the movement of the Sn$^{2+}$ ion along the ferroelectric soft mode. Finally, we describe an anharmonic extension of this model which predicts coherent switching of domains at peak THz-frequency fields of 790 kV/cm.



قيم البحث

اقرأ أيضاً

We use ultrafast x-ray pulses to characterize the lattice response of SrTiO3 when driven by strong terahertz (THz) fields. We observe transient changes in the diffraction intensity with a delayed onset with respect to the driving field. Fourier analy sis reveals two frequency components corresponding to the two lowest energy zone-center optical modes in SrTiO3. The lower frequency mode exhibits clear softening as the temperature is decreased while the higher frequency mode shows slight temperature dependence.
The general idea of using ultrashort light pulses to control ferroic order parameters has recently attracted attention as a means to achieve control over material properties on unprecedented time scales. Much of the challenge in such work is in under standing the mechanisms by which this control can be achieved, and in particular how observables can be connected to structural and electronic properties. Here we report on a combination of experimental and computational methods to study the electronic structure of the semiconducting ferroelectric GeTe when driven out of equilibrium by absorption of a femtosecond pulse of light. We observe coherent modulations of second harmonic generations on the order of 50%, which we attribute to a combination of atomic and electronic structure changes due to a coherently excited soft mode. Comparison of the observed experimental data with model calculations indicates that this effect is predominantly due to an ultrafast modulation of the covalency of the bonding between Ge and Te ions. This stands in contrast to previously held assumptions in other systems, indicating that care should be exercised in using indirect measurements of electronic structure to make strong conclusions about the magnitude of nuclear motions.
113 - F. Chen , Y. Zhu , S. Liu 2016
The dynamical processes associated with electric field manipulation of the polarization in a ferroelectric remain largely unknown but fundamentally determine the speed and functionality of ferroelectric materials and devices. Here we apply sub-picose cond duration, single-cycle terahertz pulses as an ultrafast electric field bias to prototypical BaTiO$_3$ ferroelectric thin films with the atomic-scale response probed by femtosecond x-ray scattering techniques. We show that electric fields applied perpendicular to the ferroelectric polarization drive large amplitude displacements of the titanium atoms along the ferroelectric polarization axis, comparable to that of the built-in displacements associated with the intrinsic polarization and incoherent across unit cells. This effect is associated with a dynamic rotation of the ferroelectric polarization switching on and then off on picosecond timescales. These transient polarization modulations are followed by long-lived vibrational heating effects driven by resonant excitation of the ferroelectric soft mode, as reflected in changes in the c-axis tetragonality. The ultrafast structural characterization described here enables direct comparison with first-principles-based molecular dynamics simulations, with good agreement obtained.
112 - L. Luo , X. Yang , X. Liu 2018
The recent discovery of topology-protected charge transport of ultimate thinness on surfaces of three-dimensional topological insulators (TIs) are breaking new ground in fundamental quantum science and transformative technology. Yet a challenge remai ns on how to isolate and disentangle helical spin transport on the surface from bulk conduction. Here we show that selective midinfrared femtosecond photoexcitation of exclusive intraband electronic transitions at low temperature underpins topological enhancement of terahertz (THz) surface transport in doped Bi2Se3, with no complication from interband excitations or need for controlled doping. The unique, hot electron state is characterized by conserved populations of surface/bulk bands and by frequency-dependent hot carrier cooling times that directly distinguish the faster surface channel than the bulk. We determine the topological enhancement ratio between bulk and surface scattering rates, i.e., $gamma_text{BS}/gamma_text{SS}sim$3.80 in equilibrium. These behaviors are absent at elevated lattice temperatures and for high pumpphoton frequencies and uences. The selective, mid-infrared-induced THz conductivity provides a new paradigm to characterize TIs and may apply to emerging topological semimetals in order to separate the transport connected with the Weyl nodes from other bulk bands.
317 - H. Kohlstedt , A. Petraru , 2008
We applied soft X-ray absorption spectroscopy to study the Ti L-edge in ferroelectric capacitors using a modified total electron yield method. The inner photo currents and the X-ray absorption spectra were polarization state dependent. The results ar e explained on the basis of photo electric effects and the inner potential in the ferroelectric capacitors as a result of back-to-back Schottky barriers superimposed by the potential due to the depolarization field. In general, the presented method offers the opportunity to investigate the electronic structure of buried metal-insulator and metal-semiconductor interfaces in thin film devices. Corresponding author: [email protected]
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا