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Using full opto-acoustic numerical simulations, we demonstrate enhancement and suppression of the SBS gain in a metamaterial comprising a subwavelength cubic array of dielectric spheres suspended in a dielectric background material. We develop a general theoretical framework and present several numerical examples using technologically important materials. For As$_2$S$_3$ spheres in silicon, we achieve a gain enhancement of more than an order of magnitude compared to pure silicon, and for GaAs spheres in silicon, full suppression is obtained. The gain for As$_2$S$_3$ glass can also be strongly suppressed by embedding silica spheres. The constituent terms of the gain coefficient are shown to depend in a complex way on the filling fraction. We find that electrostriction is the dominant effect behind the control of SBS in bulk media.
We compute the SBS gain for a metamaterial comprising a cubic lattice of dielectric spheres suspended in a background dielectric material. Theoretical methods are presented to calculate the optical, acoustic, and opto-acoustic parameters that describ
Stimulated Brillouin scattering (SBS) has been demonstrated in silicon waveguides in recent years. However, due to the weak interaction between photons and acoustic phonons in these waveguides, long interaction length is typically necessary. Here, we
We theoretically investigate a new class of silicon waveguides for achieving Stimulated Brillouin Scattering (SBS) in the mid-infrared (MIR). The waveguide consists of a rectangular core supporting a low-loss optical mode, suspended in air by a serie
We use theoretical analysis and numerical simulation to investigate the operation of a laser oscillating from gain supplied by stimulated Brillouin scattering (SBS) in a microresonator. The interaction of the forward, backward, and density waves with
Silicon is an ideal material for on-chip applications, however its poor acoustic properties limit its performance for important optoacoustic applications, particularly for Stimulated Brillouin Scattering (SBS). We theoretically show that silicon inve