اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدMagnetotransport in single layer graphene in a large parallel magnetic field
241
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Graphene on hexagonal boron-nitride (h-BN) is an atomically flat conducting system that is ideally suited for probing the effect of Zeeman splitting on electron transport. We demonstrate by magneto-transport measurements that a parallel magnetic field up to 30 Tesla does not affect the transport properties of graphene on h-BN even at charge neutrality where such an effect is expected to be maximal. The only magnetoresistance detected at low carrier concentrations is shown to be associated with a small perpendicular component of the field which cannot be fully eliminated in the experiment. Despite the high mobility of charge carries at low temperatures, we argue that the effects of Zeeman splitting are fully masked by electrostatic potential fluctuations at charge neutrality.
قيم البحث
اقرأ أيضاً
We develop a theory for graphene magnetotransport in the presence of carrier spin polarization as induced, for example, by the application of an in-plane magnetic field ($B$) parallel to the 2D graphene layer. We predict a negative magnetoresistance
$sigma propto B^2$ for intrinsic graphene, but for extrinsic graphene we find a non-monotonic magnetoresistance which is positive at lower magnetic fields (below the full spin-polarization) and negative at very high fields (above the full spin-polarization). The conductivity of the minority spin band $(-)$ electrons does not vanish as the minority carrier density ($n_-$) goes to zero. The residual conductivity of $(-)$ electrons at $n_- = 0$ is unique to graphene. We discuss experimental implications of our theory.
Confinement and edge structures are known to play significant roles in electronic and transport properties of two-dimensional materials. Here, we report on low-temperature magnetotransport measurements of lithographically patterned graphene cavity na
nodevices. It is found that the evolution of the low-field magnetoconductance characteristics with varying carrier density exhibits different behaviors in graphene cavity and bulk graphene devices. In the graphene cavity devices, we have observed that intravalley scattering becomes dominant as the Fermi level gets close to the Dirac point. We associate this enhanced intravalley scattering to the effect of charge inhomogeneities and edge disorder in the confined graphene nanostructures. We have also observed that the dephasing rate of carriers in the cavity devices follows a parabolic temperature dependence, indicating that the direct Coulomb interaction scattering mechanism governs the dephasing at low temperatures. Our results demonstrate the importance of confinement in carrier transport in graphene nanostructure devices.
We study the effect of an in-plane magnetic field on the non-interacting dispersion of twisted bilayer graphene. Our analysis is rooted in the chirally symmetric continuum model, whose zero-field band structure hosts exactly flat bands and large ener
gy gaps at the magic angles. At the first magic angle, the central bands respond to a parallel field by forming a quadratic band crossing point (QBCP) at the Moire Brillouin zone center. Over a large range of fields, the dispersion is invariant with an overall scale set by the magnetic field strength. For deviations from the magic angle and for realistic interlayer couplings, the motion and merging of the Dirac points lying near charge neutrality are discussed in the context of the symmetries, and we show that small magnetic fields are able to induce a qualitative change in the energy spectrum. We conclude with a discussion on the possible ramifications of our study to the interacting ground states of twisted bilayer graphene systems.
Many-body effects resulting from strong electron-electron and electron-phonon interactions play a significant role in graphene physics. We report on their manifestation in low B field magneto-phonon resonances in high quality exfoliated single-layer
and bilayer graphene encapsulated in hexagonal boron nitride. These resonances allow us to extract characteristic effective Fermi velocities, as high as $1.20 times 10^6$ m/s, for the observed dressed Landau level transitions, as well as the broadening of the resonances, which increases with Landau level index.
We report the first temperature dependent phonon transport measurements in suspended Cu-CVD single layer graphene (SLG) from 15K to 380K using microfabricated suspended devices. The thermal conductance per unit cross section $sigma$/A increases with
temperature and exhibits a peak near T~280K ($pm$10K) due to the Umklapp process. At low temperatures (T<140K), the temperature dependent thermal conductivity scales as ~T^{1.5}, suggesting that the main contribution to thermal conductance arises from flexural acoustic (ZA) phonons in suspended SLG. The $sigma$/A reaches a high value of 1.7$times10^5 T^{1.5}$ W/m^2K, which is approaching the expected ballistic phonon thermal conductance for two-dimensional graphene sheets. Our results not only clarify the ambiguity in the thermal conductance, but also demonstrate the potential of Cu-CVD graphene for heat related applications.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
