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We describe 27Al NMR experiments on Ba8AlxGe46-x type-I clathrates coupled with ab initio computational studies. For x=16, calculated spectra determined by the ab initio results gave good agreement with the measurements, with best-fitting configurations also corresponding to the computed lowest-energy atomic arrangements. Analysis of the NMR results showed that a distribution of Knight shifts dominates the central portion of the line. Computational results demonstrate that this stems from the large variation of carrier density on different sites. Al-deficient samples with x=12 and 13 exhibited a split central NMR peak, signaling two main local environments for Al ions, which we connected to the presence of vacancies. Modeling of the wide-line spectrum for x=12 indicates a configuration with more Al on the 24k site than for x=16. The results indicate the importance of nonbonding hybrids adjacent to the vacancies in the electronic structure near EF. We also address the static distortions from Pm-3n symmetry in these structures.
Type-I clathrate compounds have attracted a great deal of interest in connection with the search for efficient thermoelectric materials. These compounds constitute networked cages consisting of nano-scale tetrakaidecahedrons (14 hedrons) and dodecahe
Linear scaling methods, or O(N) methods, have computational and memory requirements which scale linearly with the number of atoms in the system, N, in contrast to standard approaches which scale with the cube of the number of atoms. These methods, wh
Atomic motion of guest atoms inside semiconducting clathrate cages is considered as an important source for the glasslike thermal behavior.69Ga and 71Ga Nuclear Magnetic Resonance (NMR) studies on type-I Ba8Ga16Sn30 show a clear low temperature relax
We present results of electronic band structure, Fermi surface and electron transport properties calculations in orthorhombic $n$- and $p$-type SnSe, applying Korringa-Kohn-Rostoker method and Boltzmann transport approach. The analysis accounted for
A characteristic feature of the state-of-the-art of real-space methods in electronic structure calculations is the diversity of the techniques used in the discretization of the relevant partial differential equations. In this context, the main approa