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تسجيل مستخدم جديدElectronic structure of a superconducting topological insulator Sr-doped Bi2Se3
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Using high-resolution angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy, the atomic and low energy electronic structure of the Sr-doped superconducting topological insulators (SrxBi2Se3) was studied. Scanning tunneling microscopy shows that most of the Sr atoms are not in the van der Waals gap. After Sr doping, the Fermi level was found to move further upwards when compared with the parent compound Bi2Se3, which is consistent with the low carrier density in this system. The topological surface state was clearly observed, and the position of the Dirac point was determined in all doped samples. The surface state is well separated from the bulk conduction bands in the momentum space. The persistence of separated topological surface state combined with small Fermi energy makes this superconducting material a very promising candidate for the time reversal invariant topological superconductor
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otropy (1.5) and upper critical field Hc2(0) equals to 2.1 T for magnetic field applied per-pendicular to c -axis of the sample. The Ginzburg-Landau coherence lengths are Xi-ab = 15.3 {AA} and Xi_c = 10.2 {AA}. The lower critical field and zero temperature penetration depth Lambda(0) are estimated to be 0.35 mT and 1550 nm respectively. Hall and Seebeck measurements confirm the dominance of electronic conduction and the carrier concentration is surprisingly low (n = 1.85 x 10^19 cm-3) at 10 K indicating possibility of unconventional superconductivity.
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