اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدExtrinsic Spin Hall Effect from Anisotropic Rashba Spin-Orbit Coupling in Graphene
118
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We study the effect of anisotropy of the Rashba coupling on the extrinsic spin Hall effect due to spin-orbit active adatoms on graphene. In addition to the intrinsic spin-orbit coupling, a generalized anisotropic Rashba coupling arising from the breakdown of both mirror and hexagonal symmetries of pristine graphene is considered. We find that Rashba anisotropy can strongly modify the dependence of the spin Hall angle on carrier concentration. Our model provides a simple and general description of the skew scattering mechanism due to the spin-orbit coupling that is induced by proximity to large adatom clusters.
قيم البحث
اقرأ أيضاً
Within an effective Dirac theory the low-energy dispersions of monolayer graphene in the presence of Rashba spin-orbit coupling and spin-degenerate bilayer graphene are described by formally identical expressions. We explore implications of this corr
espondence for transport by choosing chiral tunneling through pn and pnp junctions as a concrete example. A real-space Greens function formalism based on a tight-binding model is adopted to perform the ballistic transport calculations, which cover and confirm previous theoretical results based on the Dirac theory. Chiral tunneling in monolayer graphene in the presence of Rashba coupling is shown to indeed behave like in bilayer graphene. Combined effects of a forbidden normal transmission and spin separation are observed within the single-band n to p transmission regime. The former comes from real-spin conservation, in analogy with pseudospin conservation in bilayer graphene, while the latter arises from the intrinsic spin-Hall mechanism of the Rashba coupling.
We show that the extrinsic spin Hall effect can be engineered in monolayer graphene by decoration with small doses of adatoms, molecules, or nanoparticles originating local spin-orbit perturbations. The analysis of the single impurity scattering prob
lem shows that intrinsic and Rashba spin-orbit local couplings enhance the spin Hall effect via skew scattering of charge carriers in the resonant regime. The solution of the transport equations for a random ensemble of spin-orbit impurities reveals that giant spin Hall currents are within the reach of the current state of the art in device fabrication. The spin Hall effect is robust with respect to thermal fluctuations and disorder averaging.
We extend the electrodynamics of two dimensional electron gases to account for the extrinsic spin Hall effect (SHE). The theory is applied to doped graphene decorated with a random distribution of absorbates that induce spin-orbit coupling (SOC) by p
roximity. The formalism extends previous semiclassical treatments of the SHE to the non-local dynamical regime. Within a particle-number conserving approximation, we compute the conductivity, dielectric function, and spin Hall angle in the small frequency and wave vector limit. The spin Hall angle is found to decrease with frequency and wave number, but it remains comparable to its zero-frequency value around the frequency corresponding to the Drude peak. The plasmon dispersion and linewidth are also obtained. The extrinsic SHE affects the plasmon dispersion in the long wavelength limit, but not at large values of the wave number. This result suggests an explanation for the rather similar plasmonic response measured in exfoliated graphene, which does not exhibit the SHE, and graphene grown by chemical vapor deposition, for which a large SHE has been recently reported. Our theory also lays the foundation for future experimental searches of SOC effects in the electrodynamic response of two-dimensional electron gases with SOC disorder.
The Rashba spin-orbit coupling arising from structure inversion asymmetry couples spin and momentum degrees of freedom providing a suitable (and very intensively investigated) environment for spintronic effects and devices. Here we show that in the p
resence of strong disorder, non-homogeneity in the spin-orbit coupling gives rise to a finite spin Hall conductivity in contrast with the corresponding case of a homogeneous linear spin-orbit coupling. In particular, we examine the inhomogeneity arising from a striped structure for a two-dimensional electron gas, affecting both density and Rashba spin-orbit coupling. We suggest that this situation can be realized at oxide interfaces with periodic top gating.
We propose a new type of the spin Seebeck effect (SSE) emerging from the Rashba spin-orbit coupling in asymmetric four-terminal electron systems. This system generates spin currents or spin voltages along the longitudinal direction parallel to the te
mperature gradient in the absence of magnetic fields. The remarkable result arises from the breaking of reflection symmetry along the transverse direction. In the meantime, the SSE along the transverse direction, so-called the spin Nernst effect, with spin currents or spin voltages perpendicular to the temperature gradient can be simultaneously realized in our system. We further find that it is possible to use the temperature differences between four leads to tune the spin Seebeck coefficients.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
