ترغب بنشر مسار تعليمي؟ اضغط هنا

Emergent excitation at the magnetic metal-insulator transition in the pyrochlore osmate Cd2Os2O7

250   0   0.0 ( 0 )
 نشر من قبل Stuart Calder
 تاريخ النشر 2015
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

The rich physics manifested by 5d oxides falls outside the Mott-Hubbard paradigm used to successfully explain the electronic and magnetic properties of 3d oxides. Much consideration has been given to the extent to which strong spin-orbit coupling (SOC), in the limit of increased bandwidth and reduced electron correlation, drives the formation of novel electronic states, as manifested through the existence of metal-insulator transitions (MITs). SOC is believed to play a dominant role in 5d5 systems such as iridates (Ir4+), undergoing MITs which may or may not be intimately connected to magnetic order, with pyrochlore and perovksite systems being examples of the former and latter, respectively. However, the role of SOC for other 5d configurations is less clear. For example, 5d3 (e.g Os5+) systems are expected to have an orbital singlet and consequently a reduced effect of SOC in the groundstate. The pyrochlore osmate Cd2Os2O7 nonetheless exhibits a MIT intimately entwined with magnetic order with phenomena similar to pyrochlore iridates. Here we report the first resonant inelastic X-ray scattering (RIXS) measurements on an osmium compound, allowing us to determine the salient electronic and magnetic energy scales controlling the MIT in Cd2Os2O7, which we benchmark against detailed quantum chemistry calculations. In particular, we reveal the emergence at the MIT of a magnetic excitation corresponding to a superposition of multiple spin-flip processes from an Ising-like all-in/all-out magnetic groundstate. We discuss our results with respect to the role of SOC in magnetically mediated MITs in 5d systems



قيم البحث

اقرأ أيضاً

Cd2Os2O7 shows a peculiar metal-insulator transition at 227 K with magnetic ordering in a frustrated pyrochlore lattice, but its magnetic structure in the ordered state and the transition origin are yet uncovered. We observed a commensurate magnetic peak by resonant x-ray scattering in a high-quality single crystal. X-ray diffraction and Raman scattering experiments confirmed that the transition is not accompanied with any spatial symmetry breaking. We propose a noncollinear all-in/all-out spin arrangement on the tetrahedral network made of Os atoms. Based on this we suggest that the transition is not caused by Slater mechanism as believed earlier but by an alternative mechanism related to the formation of the specific tetrahedral magnetic order on the pyrochlore lattice in the presence of strong spin-orbit interactions.
166 - Z. Hiroi , J. Yamaura , T. Hirose 2015
We investigate the metal-insulator transition (MIT) of the osmium pyrochlore oxide Cd2Os2O7 through transport and magnetization measurements. The MIT and a magnetic transition to the all-in/all-out (AIAO) order occur simultaneously at 227 K. We propo se a mechanism based on a Lifshitz transition induced by the AIAO magnetic order probably via strong spin-orbit couplings in the specific semimetallic band structure. It is suggested, moreover, that two observed puzzles, a finite conductivity near T = 0 and an emergence of weak ferromagnetic moments, are not bulk properties but originate at magnetic domain walls between two kinds of AIAO domains.
The correlation-driven Mott transition is commonly characterized by a drop in resistivity across the insulator-metal phase boundary; yet, the complex permittivity provides a deeper insight into the microscopic nature. We investigate the frequency- an d temperature-dependent dielectric response of the Mott insulator $kappa$-(BEDT-TTF)$_{2}$-Cu$_2$(CN)$_3$ when tuning from a quantum spin liquid into the Fermi-liquid state by applying external pressure and chemical substitution of the donor molecules. At low temperatures the coexistence region at the first-order transition leads to a strong enhancement of the quasi-static dielectric constant $epsilon_1$ when the effective correlations are tuned through the critical value. Several dynamical regimes are identified around the Mott point and vividly mapped through pronounced permittivity crossovers. All experimental trends are captured by dynamical mean-field theory of the single-band Hubbard model supplemented by percolation theory.
Eu2Ir2O7, a candidate Weyl semimetal, shows an insulator-to-metal transition as a function of Bi substitution at the Eu site. In this work, we investigate the (Eu_1-xBi_x)2Ir2O7 series via Hard X-ray Photoemission Spectroscopy (HAXPES), where substit ution of larger Bi3+ for Eu3+ is reported to result in an anomalous lattice contraction (20 %) for low Bi doping (3.5 %). Using HAXPES, we confirm that all the cations retain their nominal valence state throughout the series. The asymmetric nature of Bi core-level spectra for compositions in the metallic region indicates that Bi contributes to the density of states at the Fermi energy in this doping range. The valence band spectra shows that the Bi 6s peak is unaltered throughout the series and is situated deep within the valence band. based on these observations we argue that Bi 6p - Ir 5d hybridization drives the insulator-to-metal transition.
104 - S. T. Chui , Ning Wang , 2021
We investigated metal-insulator transitions for double layer two-dimensional electron hole systems in transition metal dicalcogenides (TMDC) stacked on opposite sides of thin layers of boron nitride (BN). The interparticle interaction is calculated b y including the screening due to the polarization charges at different interfaces, including that at the encapsultion and the substrate of experimental structures. We compute and compare the energies of the metallic electron-hole plasma and the newly proposed insulating exciton solid with fixed-node diffusion Monte Carlo simulation including the high valley degeneracy of the electron bands. We found that for some examples of current experimental structures, the transition electron/hole density is in an accessible range of g x 10^12 /cm*2 with g between 4.1 and 14.5 for spacer thicknesses between 2.5 and 7.5 nm. Our result raise the possibility of exploiting this effect for logic device applications.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا