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تسجيل مستخدم جديدSpin orbit coupling controlled spin pumping effect
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Effective spin mixing conductance (ESMC) across the nonmagnetic metal (NM)/ferromagnet interface, spin Hall conductivity (SHC) and spin diffusion length (SDL) in the NM layer govern the functionality and performance of pure spin current devices with spin pumping technique. We show that all three parameters can be tuned significantly by the spin orbit coupling (SOC) strength of the NM layer in systems consisting of ferromagnetic insulating Y3Fe5O12 layer and metallic Pd1-xPtx layer. Surprisingly, the ESMC is observed to increase significantly with x changing from 0 to 1.0. The SHC in PdPt alloys, dominated by the intrinsic term, is enhanced notably with increasing x. Meanwhile, the SDL is found to decrease when Pd atoms are replaced by heavier Pt atoms, validating the SOC induced spin flip scattering model in polyvalent PdPt alloys. The capabilities of both spin current generation and spin charge conversion are largely heightened via the SOC. These findings highlight the multifold tuning effects of the SOC in developing the new generation of spintronic devices.
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The interplay between spin, charge, and orbital degrees of freedom has led to the development of spintronic devices like spin-torque oscillators, spin-logic devices, and spin-transfer torque magnetic random-access memories. In this development spin p
umping, the process where pure spin-currents are generated from magnetisation precession, has proved to be a powerful method for probing spin physics and magnetisation dynamics. The effect originates from direct conversion of low energy quantised spin-waves in the magnet, known as magnons, into a flow of spins from the precessing magnet to adjacent normal metal leads. The spin-pumping phenomenon represents a convenient way to electrically detect magnetisation dynamics, however, precessing magnets have been limited so far to pump pure spin currents, which require a secondary spin-charge conversion element such as heavy metals with large spin Hall angle or multi-layer layouts to be detectable. Here, we report the experimental observation of charge pumping in which a precessing ferromagnet pumps a charge current, demonstrating direct conversion of magnons into high-frequency currents via the relativistic spin-orbit interaction. The generated electric current, differently from spin currents generated by spin-pumping, can be directly detected without the need of any additional spin to charge conversion mechanism and amplitude and phase information about the relativistic current-driven magnetisation dynamics. The charge-pumping phenomenon is generic and gives a deeper understanding of the recently observed spin-orbit torques, of which it is the reciprocal effect and which currently attract interest for their potential in manipulating magnetic information. Furthermore, charge pumping provides a novel link between magnetism and electricity and may find application in sourcing alternating electric currents.
An electric current in the presence of spin-orbit coupling can generate a spin accumulation that exerts torques on a nearby magnetization. We demonstrate that, even in the absence of materials with strong bulk spin-orbit coupling, a torque can arise
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We have measured the inverse spin Hall effect (ISHE) in textit{n}-Ge at room temperature. The spin current in germanium was generated by spin pumping from a CoFeB/MgO magnetic tunnel junction in order to prevent the impedance mismatch issue. A clear
electromotive force was measured in Ge at the ferromagnetic resonance of CoFeB. The same study was then carried out on several test samples, in particular we have investigated the influence of the MgO tunnel barrier and sample annealing on the ISHE signal. First, the reference CoFeB/MgO bilayer grown on SiO$_{2}$ exhibits a clear electromotive force due to anisotropic magnetoresistance and anomalous Hall effect which is dominated by an asymmetric contribution with respect to the resonance field. We also found that the MgO tunnel barrier is essential to observe ISHE in Ge and that sample annealing systematically lead to an increase of the signal. We propose a theoretical model based on the presence of localized states at the interface between the MgO tunnel barrier and Ge to account for these observations. Finally, all of our results are fully consistent with the observation of ISHE in heavily doped $n$-Ge and we could estimate the spin Hall angle at room temperature to be $approx$0.001.
Spin-orbit coupling (SOC) is essential in understanding the properties of 5d transition metal compounds, whose SOC value is large and almost comparable to other key parameters. Over the past few years, there have been numerous studies on the SOC-driv
en effects of the electronic bands, magnetism, and spin-orbit entanglement for those materials with a large SOC. However, it is less studied and remains an unsolved problem in how the SOC affects the lattice dynamics. We, therefore, measured the phonon spectra of 5d pyrochlore Cd2Os2O7 over the full Brillouin zone to address the question by using inelastic x-ray scattering (IXS). Our main finding is a visible mode-dependence in the phonon spectra, measured across the metal-insulator transition at 227 K. We examined the SOC strength dependence of the lattice dynamics and its spin-phonon (SP) coupling, with first-principle calculations. Our experimental data taken at 100 K are in good agreement with the theoretical results obtained with the optimized U = 2.0 eV with SOC. By scaling the SOC strength and the U value in the DFT calculations, we demonstrate that SOC is more relevant than U to explaining the observed mode-dependent phonon energy shifts with temperature. Furthermore, the temperature dependence of the phonon energy can be effectively described by scaling SOC. Our work provides clear evidence of SOC producing a non-negligible and essential effect on the lattice dynamics of Cd2Os2O7 and its SP coupling.
Large charge-to-spin conversion (spin Hall angle) and spin Hall conductivity are prerequisites for development of next generation power efficient spintronic devices. In this context, heavy metals (e.g. Pt, W etc.), topological insulators, antiferroma
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