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The band bending (BB) effect on the surface of the second-generation topological insulators implies a serious challenge to design transport devices. The BB is triggered by the effective electric field generated by charged impurities close to the surface and by the inhomogeneous charge distribution of the occupied surface states. Our self-consistent calculations in the Korringa-Kohn-Rostoker framework showed that in contrast to the bulk bands, the spectrum of the surface states is not bent at the surface. In turn, it is possible to tune the energy level of the Dirac point via the deposited surface dopants. In addition, the electrostatic modifications induced by the charged impurities on the surface induce long range oscillations in the charge density. For dopants located beneath the surface, however, these oscillations become highly suppressed. Our findings are in good agreement with recent experiments, however, our results indicate that the concentration of the surface doping cannot be estimated from the energy shift of the Dirac cone within the scope of the effective continuous model for the protected surface states.
Shubnikov-de-Haas oscillations were studied under high magnetic field in Bi$_2$Se$_3$ nanostructures grown by Chemical Vapor Transport, for different bulk carrier densities ranging from $3times10^{19}text{cm}^{-3}$ to $6times10^{17}text{cm}^{-3}$. Th
We perform ab-initio calculations on Bi$_mathrm{{Se}}$ antisite defects in the surface of Bi$_2$Se$_3$, finding strong low-energy defect resonances with a spontaneous ferromagnetism, fixed to an out-of-plane orientation due to an exceptional large ma
We present a theoretical study on the high-field charge transport on the surface of Bi$_2$Se$_3$ and reproduce all the main features of the recent experimental results, i.e., the incomplete current saturation and the finite residual conductance in th
We performed x-ray magnetic circular dichroism (XMCD) measurements on heterostructures comprising topological insulators (TIs) of the (Bi,Sb)$_2$(Se,Te)$_3$ family and the magnetic insulator EuS. XMCD measurements allow us to investigate element-sele
We study the fate of the surface states of Bi$_2$Se$_3$ under disorder with strength larger than the bulk gap, caused by neon sputtering and nonmagnetic adsorbates. We find that neon sputtering introduces strong but dilute defects, which can be model