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Bulk 1T-TaSe2 exhibits unusually high charge density wave (CDW) transition temperatures of 600 K and 473 K below which the material exists in the incommensurate (I-CDW) and the commensurate (C-CDW) charge-density-wave phases, respectively. The C-CDW reconstruction of the lattice coincides with new Raman peaks resulting from zone-folding of phonon modes from middle regions of the original Brillouin zone back to the Gamma point. The C-CDW transition temperatures as a function of film thickness are determined from the evolution of these new Raman peaks and they are found to decrease from 473K to 413K as the film thicknesses decrease from 150 nm to 35 nm. A comparison of the Raman data with ab initio calculations of both the normal and C-CDW phases gives a consistent picture of the zone-folding of the phonon modes following lattice reconstruction. In the I-CDW phase, the loss of translational symmetry coincides with a strong suppression and broadening of the Raman peaks. The observed change in the C-CDW transition temperature is consistent with total energy calculations of bulk and monolayer 1T-TaSe2.
Here we report a scanning tunneling microscopy (STM) and spectroscopy (STS) study in the superconducting state of 2H-NbS2. We directly visualize the existence of incommensurate charge density wave (CDW) that is pinned by atomic impurities. In strong
Plasmons in two-dimensional (2D) materials beyond graphene have recently gained much attention. However, the experimental investigation is limited due to the lack of suitable materials. Here, we experimentally demonstrate localized plasmons in a corr
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In the sake of connecting the charge-density-wave (CDW) of TaSe$_2$ and single-emph{textbf{q}} CDW-type distortion of TaTe$_2$, we present an overall electronic phase diagram of 1emph{T}-TaSe$_{2-x}$Te$_x$ ($0 leq x leq 2$). In the experimentally pre
We study the coupled charge-lattice dynamics in the commensurate charge density wave (CDW) phase of the layered compound 1T-TaS$_{2}$ driven by an ultrashort laser pulse. For describing its electronic structure, we employ a tight-binding model of pre