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Usual paradigm in the theory of electron transport is related to the fact that the dielectric permittivity of the insulator is assumed to be constant, no time dispersion. We take into account the slow polarization dynamics of the dielectric layers in the tunnel barriers in the fluctuating electric fields induced by single-electron tunneling events and study transport in the single electron transistor (SET). Here slow dielectric implies slow compared to the characteristic time scales of the SET charging-discharging effects. We show that for strong enough polarizability, such that the induced charge on the island is comparable with the elementary charge, the transport properties of the SET substantially deviate from the known results of transport theory of SET. In particular, the coulomb blockade is more pronounced at finite temperature, the conductance peaks change their shape and the current-voltage characteristics show the memory-effect (hysteresis). However, in contrast to SETs with ferroelectric tunnel junctions, here the periodicity of the conductance in the gate voltage is not broken, instead the period strongly depends on the polarizability of the gate-dielectric. We uncover the fine structure of the hysteresis-effect where the large hysteresis loop may include a number of smaller loops. Also we predict the memory effect in the current-voltage characteristics $I(V)$, with $I(V) eq -I(-V)$.
The concept of dynamical symmetries is used for formulation of the renormalization group approach to the Kondo effect in the Anderson model with repulsive and attractive interaction $U$. It is shown that the generic local symmetry of the Anderson Ham
We present the electron tunneling transport and spectroscopic characters of a superconducting Josephson junction with a barrier of single Kitaev quantum spin liquid (QSL) layer. We find that the dynamical spin correlation features are well reflected
We have used numerical modeling and a semi-analytical calculation method to find the low frequency value S_{I}(0) of the spectral density of fluctuations of current through 1D arrays of small tunnel junctions, using the ``orthodox theory of single-el
We consider a two-band spinless model describing an excitonic insulator (EI) on the two-dimensional square lattice with anisotropic hopping parameters and electron-phonon (el-ph) coupling, inspired by the EI candidate Ta$_2$NiSe$_5$. We systematicall
We discuss memory effects in the conductance of hopping insulators due to slow rearrangements of structural defects leading to formation of polarons close to the electron hopping states. An abrupt change in the gate voltage and corresponding shift of