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We theoretically and experimentally demonstrate energy transfer mediated by optical near-field interactions in a multi-layer InAs quantum dot (QD) structure composed of a single layer of larger dots and N layers of smaller ones. We construct a stochastic model in which optical near-field interactions that follow a Yukawa potential, QD size fluctuations, and temperature-dependent energy level broadening are unified, enabling us to examine device-architecture-dependent energy transfer efficiencies. The model results are consistent with the experiments. This study provides an insight into optical energy transfer involving inherent disorders in materials and paves the way to systematic design principles of nanophotonic devices that will allow optimized performance and the realization of designated functions.
Energy can be transferred in a radiative manner between objects with different electrical fluctuations. In this work, we consider near-field energy transfer between two separated parallel plates: one is graphene-covered boron nitride and the other a
Scattering-type scanning near-field optical microscopy (s-SNOM) is instrumental in exploring polaritonic behaviors of two-dimensional (2D) materials at the nanoscale. A sharp s-SNOM tip couples momenta into 2D materials through phase matching to exci
Optical near-field interactions between nanostructured matter, such as quantum dots, result in unidirectional optical excitation transfer when energy dissipation is induced. This results in versatile spatiotemporal dynamics of the optical excitation,
Spin and orbital angular momentum of light plays a central role in quantum nanophotonics as well as topological electrodynamics. Here, we show that the thermal radiation from finite-sized bodies comprising of nonreciprocal magneto-optical materials c
We demonstrate in this work that the use of metasurfaces provides a viable strategy to largely tune and enhance near-field radiative heat transfer between extended structures. In particular, using a rigorous coupled wave analysis, we predict that Si-