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We investigated the effect of an electric field on the interface magnetic anisotropy of a thin MgO/Fe/MgO layer using density functional theory. The perpendicular magnetic anisotropy energy (MAE) increases not only under electron depletion but also under some electron accumulation conditions, showing a strong correlation with the number of electrons on the interface Fe atom. The reverse variation in the MAE under the electric field is ascribed to novel features on the charged interface, such as electron leakage. We discuss the origin of the variation in terms of the electronic structures.
The electric field effect on magnetic anisotropy was studied in an ultrathin Fe(001) monocrystalline layer sandwiched between Cr buffer and MgO tunnel barrier layers, mainly through post-annealing temperature and measurement temperature dependences.
Recently, perpendicular magnetic anisotropy (PMA) and its voltage control (VC) was demonstrated for Cr/Fe/MgO (Physical Review Applied 5, 044006 (2016)). In this study, we shed a light on the origin of large voltage-induced anisotropy change in Cr/Fe
Electric field control of magnetic anisotropy in ferromagnets has been intensively pursued in spintronics to achieve efficient memory and computing devices with low energy consumption. Compared with ferromagnets, antiferromagnets hold huge potential
We report proximity effects of spin-orbit coupling in EuO$_{1-x}$ films capped with a Pt overlayer. Transport measurements suggest that current flows along a conducting channel at the interface between the Pt and EuO. The temperature dependence of th
Atomic-scale magnetic nanostructures are promising candidates for future information processing devices. Utilizing external electric field to manipulate their magnetic properties is an especially thrilling project. Here, by careful identifying differ