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We used resonant laser spectroscopy of multiple confocal InGaAs quantum dots to spatially locate charge fluctuators in the surrounding semiconductor matrix. By mapping out the resonance condition between a narrow-band laser and the neutral exciton transitions of individual dots in a field effect device, we identified spectral discontinuities as arising from charging and discharging events that take place within the volume adjacent to the quantum dots. Our analysis suggests that residual carbon dopants are a major source of charge-fluctuating traps in quantum dot heterostructures.
We characterize the positively charged exciton (X1+) in single InGaAs quantum dots using resonant laser spectroscopy. Three samples with different dopant species (Be or C as acceptors, Si as a donor) are compared. The p-doped samples exhibit larger i
We analyze the electronic transport through a quantum dot that contains a magnetic impurity. The coherent transport of electrons is governed by the quantum confinement inside the dot, but is also influenced by the exchange interaction with the impuri
We demonstrate non-perturbative coupling between a single self-assembled InGaAs quantum dot and an external fiber-mirror based microcavity. Our results extend the previous realizations of tunable microcavities while ensuring spatial and spectral over
We consider an impurity with a spin degree of freedom coupled to a finite reservoir of non-interacting electrons, a system which may be realized by either a true impurity in a metallic nano-particle or a small quantum dot coupled to a large one. We s
PbS quantum dots are promising active emitters for use with high-quality Si nanophotonic devices in the telecommunications-band. Measurements of low quantum dot densities are limited both because of low fluorescence levels and the challenges of singl