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Hole subband structure under strong band bending such a Pb on Si(111) and Indium on Si(111) have been investigated by angle-resolved photoelectron spectroscopy(ARPES). Energy levels of hole subband structure which indicate the quantized levels in inversion layer are strongly depend on band bend shape which can be controlled by the impurity concentration of substrate. Meanwhile, the discrepancy for the suband energy separation between experimental results and calculation results is also observed. In this study, we aim to clarify the relationship between flash annealing and impurity concentration and the hole subband. From this results, it was found out that high temperature flash annealing at 1250 degree has considerable effect on the impurity concentration at subsurface region by Secondary Ion Mass spectroscopy (SIMS) and our diffusion model. This effect makes the band bend shape and subband energy separation change. Moreover, It was revealed that the reduction of the impurity distribution was inhibited less than 900 degree of the flashing temperature.
The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR) spectroscopy
We have performed a first-principles study on the deformation effect of the electronic structures of graphite nanoribbon arrays with zigzag edges on both sides, and the edge atoms are terminated with hydrogen atoms. A uniaxial strain is considered to
The electronic structure of BaFe2As2 doped with Co, Ni, and Cu has been studied by a variety of experimental and theoretical methods, but a clear picture of the dopant 3d states has not yet emerged. Herein we provide experimental evidence of the dist
When a crystal becomes thinner and thinner to the atomic level, peculiar phenomena discretely depending on its layer-numbers (n) start to appear. The symmetry and wave functions strongly reflect the layer-numbers and stacking order, which brings us a
The Weyl semimetal NbP exhibits a very small Fermi surface consisting of two electron and two hole pockets, whose fourfold degeneracy in $k$ space is tied to the rotational symmetry of the underlying tetragonal crystal lattice. By applying uniaxial s